Photoelectric conversion element, solid-state imaging device, and electronic apparatus

Abstract

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

1 . A photoelectric conversion element, comprising:
 a first electrode;   a second electrode that faces the first electrode; and   an organic photoelectric conversion layer between the first electrode and the second electrode, wherein the organic photoelectric conversion layer comprises:
 a subphthalocyanine; and 
 a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene in a visible range. 
   
     
     
         2 . The photoelectric conversion element according to  claim 1 , wherein the fullerene derivative is represented by formula (1): 
       
         
           
           
               
               
           
         
         where R denotes, each independently, a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group having carbon atoms ranging from 1 to 12, a phenyl group, a group having a linear or condensed aromatic compound, a group having a halide, a partial fluoroalkyl group, a perfluoroalkyl group, a silyl alkyl group, a silyl alkoxy group, an aryl silyl group, an arylsulfanyl group, an alkylsulfanyl group, an arylsulfonyl group, an alkylsulfonyl group, an aryl sulfide group, an alkyl sulfide group, an amino group, an alkylamino group, an arylamino group, a hydroxy group, an alkoxy group, an acylamino group, an acyloxy group, a carbonyl group, a carboxy group, a carboxoamido group, a carboalkoxy group, an acyl group, a sulfonyl group, a cyano group, a nitro group, a group having a chalcogenide, a phosphine group, a phosphonic group, or a derivative thereof, provided that n is an integer of 2 or more. 
       
     
     
         3 . The photoelectric conversion element according to  claim 1 , wherein a number of the substituent that modifies the fullerene derivative ranges from 2 to 48. 
     
     
         4 . The photoelectric conversion element according to  claim 1 , wherein the organic photoelectric conversion layer includes an organic semiconductor configured to absorb light of a selective wavelength region. 
     
     
         5 . The photoelectric conversion element according to  claim 1 , wherein the organic photoelectric conversion layer has a photoelectric conversion function.