Semiconductor memory device and method for manufacturing same

Abstract

According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction, a plurality of stacked films respectively provided between the first interconnects and the second interconnects, each of the plurality of stacked films including a variable resistance film, a first inter-layer insulating film provided in a first region between the stacked films, and a second inter-layer insulating film provided in a second region having a wider width than the first region. The second inter-layer insulating film includes a plurality of protrusions configured to support one portion of the plurality of second interconnects on the second region. A protruding length of the protrusions is less than a stacking height of the stacked films.

What is claimed is: 
     
         1 . A semiconductor memory device, comprising:
 a plurality of first interconnects extending in a first direction, the first interconnects arranged in a second direction crossing to the first direction;   a plurality of second interconnects extending in the second direction, the second interconnects arranged in the first direction;   a plurality of variable resistance films provided between the first interconnects and the second interconnects respectively in a third direction crossing to the first direction and the second direction, the plurality of variable resistance films arranged in the first direction and the second direction;   a first inter-layer insulating film including a first part and a plurality of first protrusions, the first part provided between the first interconnects adjacent to each other in the second direction, the first part extending in the first direction, the first protrusions provided between the variable resistance films adjacent to each other in the second direction, the first protrusions extending from the first part to the second interconnects in the third direction, the first protrusions arranged in the first direction; and   a second inter-layer insulating film provided on a periphery of the variable resistance films arranged in the second direction, the second inter-layer insulating film separated from a portion between the variable resistance films adjacent to each other, the second inter-layer insulating film including a second part and a plurality of second protrusions, the second part extending in the first direction, the second protrusions extending from the second part to the second interconnects in the third direction, the second protrusions arranged in the first direction, a length of the second protrusions in the third direction being less than a length of the first protrusions in the third direction.