Semiconductor device with thin redistribution layers

Abstract

A semiconductor device with thin redistribution layers is disclosed and may include forming a first redistribution layer on a dummy substrate, electrically coupling a semiconductor die to the first redistribution layer, and forming a first encapsulant layer on the redistribution layer and around the semiconductor die. The dummy substrate may be removed thereby exposing a second surface of the first redistribution layer. A dummy film may be temporarily affixed to the exposed second surface of the redistribution layer and a second encapsulant layer may be formed on the exposed top surface of the semiconductor die, a top surface and side edges of the first encapsulant layer, and side edges of the first redistribution layer. The dummy film may be removed to again expose the second surface of the first redistribution layer, and a second redistribution layer may be formed on the first redistribution layer and on the second encapsulant layer.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device, the method comprising:
 forming a first redistribution layer on a dummy substrate;   electrically coupling a semiconductor die to a first surface of the first redistribution layer;   forming a first encapsulant layer on the first surface of the redistribution layer and around the semiconductor die leaving a top surface of the semiconductor die exposed;   removing the dummy substrate thereby exposing a second surface of the first redistribution layer;   temporarily affixing a dummy film to the exposed second surface of the redistribution layer;   forming a second encapsulant layer on the exposed top surface of the semiconductor die, a top surface and side edges of the first encapsulant layer, and side edges of the first redistribution layer;   removing the dummy film to again expose the second surface of the first redistribution layer; and   forming a second redistribution layer on the second surface of the first redistribution layer and on a bottom surface of the second encapsulant layer.   
     
     
         2 . The method according to  claim 1 , comprising forming an underfill material between the semiconductor die and the first surface of the first redistribution layer before forming the first encapsulant material. 
     
     
         3 . The method according to  claim 1 , comprising forming the first encapsulant layer to a thickness such that a top surface of the first encapsulant layer is coplanar with the exposed top surface of the semiconductor die. 
     
     
         4 . The method according to  claim 1 , comprising forming a solder ball on the second redistribution layer. 
     
     
         5 . The method according to  claim 4 , wherein the solder ball is electrically coupled to the semiconductor die via the first and second redistribution layers. 
     
     
         6 . The method according to  claim 1 , wherein the dummy film is wider than the first redistribution layer. 
     
     
         7 . The method according to  claim 1 , wherein the second redistribution layer is wider than the first distribution layer. 
     
     
         8 . The method according to  claim 1 , comprising singulating the dummy substrate and first redistribution layer into individual modules before removing the dummy substrate. 
     
     
         9 . The method according to  claim 1 , wherein the bottom surface of the second encapsulant layer is coplanar with the second surface of the second redistribution layer. 
     
     
         10 . The method according to  claim 1 , wherein the thickness of the first redistribution layer is 10 μm or less. 
     
     
         11 . The method according to  claim 1 , comprising forming the first redistribution layer by forming a dielectric layer on the dummy substrate, forming holes in the dielectric layer, and depositing one or more metal layers in the formed holes and on the first dielectric layer. 
     
     
         12 . A semiconductor device, the device comprising:
 a first redistribution layer having a first surface and a second surface opposite the first surface;   a semiconductor die electrically coupled to the first surface of the first redistribution layer;   a first encapsulant layer formed on the first surface of the redistribution layer and around the semiconductor die leaving a top surface of the semiconductor die exposed;   a second encapsulant layer formed on the exposed top surface of the semiconductor die, a top surface and side edges of the first encapsulant layer, and side edges of the first redistribution layer; and   a second redistribution layer formed on the second surface of the first redistribution layer and on a bottom surface of the second encapsulant layer.   
     
     
         13 . The device according to  claim 12 , wherein an underfill material is formed between the semiconductor die and the first surface of the first redistribution layer. 
     
     
         14 . The device according to  claim 12 , wherein the first encapsulant layer is formed to a thickness such that a top surface of the first encapsulant layer is coplanar with the exposed top surface of the semiconductor die. 
     
     
         15 . The device according to  claim 12 , wherein a solder ball is formed on the second redistribution layer. 
     
     
         16 . The device according to  claim 15 , wherein the solder ball is electrically coupled to the semiconductor die via the first and second redistribution layers. 
     
     
         17 . The device according to  claim 12 , wherein the second redistribution layer is wider than the first distribution layer. 
     
     
         18 . The device according to  claim 12 , wherein the bottom surface of the second encapsulant layer is coplanar with the second surface of the second redistribution layer. 
     
     
         19 . The device according to  claim 12 , wherein the thickness of the first redistribution layer is 10 μm or less. 
     
     
         20 . A method for forming a semiconductor device, the method comprising:
 forming a first redistribution layer on a dummy substrate;   electrically coupling a semiconductor die to a first surface of the first redistribution layer;   forming a first encapsulant layer on the first surface of the redistribution layer and around the semiconductor die leaving a top surface of the semiconductor die exposed;   singulating the dummy substrate into a plurality of device modules each comprising a semiconductor die and a portion of the first redistribution layer and a portion of the dummy substrate;   removing the dummy substrate from at least one of the plurality of device modules, thereby exposing a second surface of the first redistribution layer;   temporarily affixing a dummy film to the exposed second surface of the redistribution layer of the at least one of the plurality of device modules;   forming a second encapsulant layer on the exposed top surface of the semiconductor die of the at least one of the plurality of device modules, a top surface and side edges of the first encapsulant layer, and side edges of the first redistribution layer;   removing the dummy film to again expose the second surface of the first redistribution layer; and   forming a second redistribution layer on the second surface of the first redistribution layer and on a bottom surface of the second encapsulant layer.