Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

Abstract

There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

What is claimed is: 
     
         1 . A substrate processing apparatus, comprising:
 a process container in which a substrate is accommodated;   a transfer device configured to transfer the substrate into the process container;   a substrate mounting table configured to mount the substrate in the process container;   a gas supplier configured to supply a gas to the substrate in the process container;   a first gas supply line including a first heater and being configured to supply a first gas via the gas supplier;   a second gas supply line configured to supply a second gas via the gas supplier;   a third gas supply line configured to supply a third gas to the gas supplier;   at least one first gas supply port installed at the gas supplier and being in fluid communication with the first gas supply line; and   at least one second gas supply port installed at the gas supplier and being in fluid communication with the second gas supply line.   
     
     
         2 . The substrate processing apparatus of  claim 1 , further comprising:
 a second heater installed at the substrate mounting table; and   a lift pin configured to hold the substrate over the substrate mounting table.   
     
     
         3 . The substrate processing apparatus of  claim 1 , wherein the third gas supply line is connected to the first gas supply line. 
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the third gas supply line is connected to the gas supplier in parallel with the first gas supply line. 
     
     
         5 . The substrate processing apparatus of  claim 1 , wherein the gas supplier includes:
 a buffer space configured to supply the first gas to the substrate; and   an exhauster configured to exhaust the third gas supplied to the buffer space.   
     
     
         6 . The substrate processing apparatus of  claim 1 , further comprising:
 a fourth gas supply line configured to supply a fourth gas to a transfer chamber installed in the process container; and   a fourth heater installed at the fourth gas supply line.   
     
     
         7 . The substrate processing apparatus of  claim 1 , wherein the gas supplier is configured to face an upper surface of the substrate,
 wherein the first gas supply line is connected to a central side of the gas supplier, and   wherein the third gas supply line is connected to an outer peripheral side of the gas supplier.   
     
     
         8 . The substrate processing apparatus of  claim 1 , wherein the at least one first gas supply port includes one or more ports installed at a central side to the substrate and one or more ports installed at an outer peripheral side to the substrate, and
 wherein the one or more ports installed at the central side to the substrate and the one or more ports installed at the outer peripheral side to the substrate are different from each other in at least one selected from the group of numbers of the one or more ports and sizes of the one or more ports.   
     
     
         9 . The substrate processing apparatus of  claim 1 , wherein the first gas is at least one selected from the group of a N 2  gas, a H 2  gas, and a He gas. 
     
     
         10 . The substrate processing apparatus of  claim 1 , wherein the third gas is at least one selected from the group of a N 2  gas, a H 2  gas, a He gas, a diluted H 2  gas, and an activated H 2  gas. 
     
     
         11 . The substrate processing apparatus of  claim 1 , wherein the first gas and the third gas are an inert gas, and the second gas is a processing gas. 
     
     
         12 . The substrate processing apparatus of  claim 1 , wherein the first gas and the third gas are the same gas.