Plasma processing apparatus and method therefor

Abstract

A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. The carrier is placed on an electrode unit of a stage provided in a chamber. The electrode unit is cooled by a cooling section configured to cool the electrode unit. An upper face of the electrode unit is at least as large as the back side of the carrier. The holding sheet and the frame are cooled effectively by the heat transfer to the stage.

1 - 11 . (canceled) 
     
     
         12 . A plasma processing apparatus for plasma processing a substrate held by a carrier having a frame and a holding sheet, comprising:
 a chamber; and   a stage provided in the chamber, the stage including an electrode unit on which the carrier is placed and which comprises an electrostatic chuck,   wherein the carrier is placed on a central part of an upper face of the electrostatic chuck such that the carrier expose an outermost area of the upper face of the electrostatic chuck, an area of the upper face of the electrostatic chuck upon which the carrier is placed being equal to an area of the carrier and smaller than a whole of the upper face of the electrostatic chuck.   
     
     
         13 . The plasma processing apparatus according to  claim 12 , wherein the electrode unit further comprises an electrode unit body in which a coolant flow path to cool the electrode unit is formed. 
     
     
         14 . The plasma processing apparatus according to  claim 12 , wherein the electrode unit supports and cools all of a surface of the carrier placed on the central part of an upper face of the electrostatic chuck. 
     
     
         15 . The plasma processing apparatus according to  claim 12 , wherein the electrostatic chuck of the electrode unit is larger than the substrate. 
     
     
         16 . The plasma processing apparatus according to  claim 12 , further comprising:
 a first electrostatic attraction electrode of unipolar type incorporated in a first area of the electrostatic chuck, the first area being an area in which the substrate is placed via the holding sheet; and   a second electrostatic attraction electrode of bipolar type which is incorporated in a second area of the electrostatic chuck and to which a direct current voltage is applied, the second area including at least an area in which the frame is placed via the holding sheet and an area in which the holding sheet between the substrate and the frame is placed.   
     
     
         17 . The plasma processing apparatus according to  claim 16 , further comprising a cover capable of coming into and out of contact with the stage, the cover comprising:
 a body covering the holding sheet and the frame of the carrier placed on the central part of the upper face of the electrostatic chuck; and   a window formed to penetrate the body in a thickness direction so as to expose the substrate held in the carrier placed on the central part of the upper face of the electrostatic chuck to an internal space of the chamber.   
     
     
         18 . The plasma processing apparatus according to  claim 17 , wherein the second area of the electrostatic chuck includes an area in which the cover abuts on the electrostatic chuck. 
     
     
         19 . The plasma processing apparatus according to  claim 16 , wherein a direct current voltage is applied to the first electrostatic attraction electrode. 
     
     
         20 . The plasma processing apparatus according to  claim 16 , wherein a voltage obtained by superimposing a radio frequency voltage on a direct current voltage is applied to the first electrostatic attraction electrode. 
     
     
         21 . The plasma processing apparatus according to  claim 16 , wherein the second electrostatic attraction electrode is disposed without overlapping the substrate. 
     
     
         22 . The plasma processing apparatus according to  claim 12 , further comprising a cover, the cover comprising:
 a body covering the holding sheet and the frame of the carrier placed on the central part of the upper face of the electrostatic chuck; and   a window formed to penetrate the body in a thickness direction so as to expose the substrate held in the carrier placed on the central part of the upper face of the electrostatic chuck to an internal space of the chamber.   
     
     
         23 . The plasma processing apparatus according to  claim 12 ,
 wherein a portion of the coolant flow path is located between the whole of the upper face of the electrostatic chuck and the central part of the upper face of the electrostatic chuck, upon which the carrier is placed.