Pattern formation method and material for manufacturing semiconductor devices

Abstract

In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

What is claimed is: 
     
         1 . A pattern formation method comprising:
 forming a bottom layer over an underlying layer;   forming a photo sensitive layer over the bottom layer;   patterning the photo sensitive layer by using a lithographic technique;   patterning the bottom layer by using the patterned photo sensitive layer; and   patterning the underlying layer, wherein:   the photo sensitive layer contains silicon in an amount of 50 wt % or more with respect to an entire weight of the photo sensitive layer and a photo active compound (PAC).   
     
     
         2 . The pattern formation method of  claim 1 , wherein the photo sensitive layer includes a silicon particle having a silicon core surrounded by a plurality of ligands. 
     
     
         3 . The pattern formation method of  claim 2 , wherein a diameter of the silicon core is in a range from 2 nm to 10 nm. 
     
     
         4 . The pattern formation method of  claim 2 , wherein each of the plurality of organic ligands has a chemical structure R-Lp, which includes at least a first spacer group R and a polar group Lp linked to the silicon core. 
     
     
         5 . The pattern formation method of  claim 4 , wherein:
 the first spacer group R include one or more of hydrogen, aromatic carbon ring, or straight or cyclic alkyl, alkoxyl, fluoroalkyl, fluoroalkoxyl, alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol spacer group with the chain carbon 1˜12, and   the polar group Lp includes one or more of —Cl, —Br, —I, —NO 2 , —SO 3 —, —H, —CN, —NCO, —OCN, —CO 2 —, —OH, —OR*, —OC(O)CR*, —SR*, —SO 2 N(R*) 2 , —SO 2 R*, —SOR*, —OC(O)R*, —C(O)OR*; —C(O)R*; —Si(OR*) 3 ; —Si(R*) 3 ; epoxyl groups, where R* is H, an unbranched or branched, cyclic or noncyclic saturated or unsaturated alkyl or alkenyl or alkynyl groups.   
     
     
         6 . The pattern formation method of  claim 1 , wherein the photo sensitive layer contains silicon in an amount of 50 wt % or more and 80 wt % or less with respect to the entire weight of the photo sensitive layer. 
     
     
         7 . The pattern formation method of  claim 1 , wherein a thickness of the photo sensitive layer is in a range from 30 nm to 80 nm. 
     
     
         8 . The pattern formation method of  claim 1 , wherein the bottom layer is made of an organic material. 
     
     
         9 . The pattern formation method of  claim 8 , wherein a thickness of the bottom layer is in a range from 50 nm to 200 nm. 
     
     
         10 . A pattern formation method comprising:
 forming a Si-containing layer over an underlying layer;   patterning the Si-containing layer; and   patterning the underlying layer by using the patterned Si-containing layer, wherein:   the Si-containing layer contains silicon particles in an amount of 50 wt % or more with respect to an entire weight of the Si-containing layer, and   each of the silicon particles includes a silicon core surrounded by a plurality of organic ligands.   
     
     
         11 . The pattern formation method of  claim 10 , wherein each of the plurality of organic ligands has a chemical structure R-Lp, which includes at least a first spacer group R and a polar group Lp linked to the silicon core. 
     
     
         12 . The pattern formation method of  claim 11 , wherein
 the first spacer group R include one or more of hydrogen, aromatic carbon ring, or straight or cyclic alkyl, alkoxyl, fluoroalkyl, fluoroalkoxyl, alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol spacer group with the chain carbon 1˜12, and   the polar group Lp includes one or more of —Cl, —Br, —I, —NO 2 , —SO 3 —, —H, —CN, —NCO, —OCN, —CO 2 —, —OH, —OR*, —OC(O)CR*, —SR*, —SO 2 N(R*) 2 , —SO 2 R*, —SOR*, —OC(O)R*, —C(O)OR*; —C(O)R*; —Si(OR*) 3 ; —Si(R*) 3 ; epoxyl groups, where R* is H, an unbranched or branched, cyclic or noncyclic saturated or unsaturated alkyl or alkenyl or alkynyl groups.   
     
     
         13 . The pattern formation method of  claim 10 , wherein the Si-containing layer contains silicon particles in an amount of 50 wt % or more and 70 wt % or less with respect to the entire weight of the Si-containing layer. 
     
     
         14 . The pattern formation method of  claim 10 , wherein the Si-containing layer is patternable by ultra violet light. 
     
     
         15 . A pattern formation method comprising:
 forming an underlying device over a substrate;   forming a first interlayer dielectric (ILD) layer over the underlying device;   forming an etch-stop layer over the first ILD layer;   forming a second ILD layer over the etch-stop layer;   forming a hard mask layer over the second ILD layer;   forming a bottom layer over the hard mask layer;   forming a Si-containing layer over the bottom layer;   patterning the Si-containing layer;   patterning the bottom layer and hard mask layer by using the patterned Si-containing layer as an etching mask;   removing the patterned Si-containing layer and the bottom layer; and   patterning the second ILD layer, the etch-stop layer and the first ILD layer by using the hard mask layer as an etching mask, wherein:   the Si-containing layer silicon particles or silicon clusters, and   each of the silicon particles or the silicon clusters includes a silicon core surrounded by a plurality of organic ligands.   
     
     
         16 . The pattern formation method of  claim 15 , wherein the silicon particles or the silicon clusters include silicon in an amount of 50 wt % or more and 80 wt % or less with respect to an entire weight of the Si-containing layer. 
     
     
         17 . The pattern formation method of  claim 16 , wherein each of the plurality of organic ligands has a chemical structure R-Lp, which includes at least a first spacer group R and a polar group Lp linked to the silicon core. 
     
     
         18 . The pattern formation method of  claim 17 , wherein
 the first spacer group R include one or more of hydrogen, aromatic carbon ring, or straight or cyclic alkyl, alkoxyl, fluoroalkyl, fluoroalkoxyl, alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol spacer group with the chain carbon 1˜12, and   the polar group Lp includes one or more of —Cl, —Br, —I, —NO 2 , —SO 3 —, —H, —CN, —NCO, —OCN, —CO 2 —, —OH, —OR*, —OC(O)CR*, —SR*, —SO 2 N(R*) 2 , —SO 2 R*, —SOR*, —OC(O)R*, —C(O)OR*; —C(O)R*; —Si(OR*) 3 ; —Si(R*) 3 ; epoxyl groups, where R* is H, an unbranched or branched, cyclic or noncyclic saturated or unsaturated alkyl or alkenyl or alkynyl groups.   
     
     
         19 . The pattern formation method of  claim 15 , wherein the hard mask layer includes TiN. 
     
     
         20 . The pattern formation method of  claim 15 , further comprising forming an antireflection coating layer over the hard mask layer.