US2022254883A1PendingUtilityA1
Process for fabricating silicon nanostructures
Assignee: ADVANCED SILICON GROUP TECH LLCPriority: Apr 14, 2008Filed: Apr 27, 2022Published: Aug 11, 2022
Est. expiryApr 14, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10P 50/695H10P 50/667H10P 50/642H10P 14/69215H10P 14/6939H10P 14/6532H10P 14/6508H10P 14/6342H10P 14/6314H10P 14/3462H10P 14/3411H10P 14/3256H10P 14/3238H10P 14/683H10P 14/418H10P 14/44H10D 62/122H10D 62/83H10D 62/40H10F 77/703H10F 77/122H10F 77/70H10F 77/14H10D 62/119H01M 4/1395B01J 20/10H01M 4/134H01M 4/386Y02E10/50H01M 4/661H01M 4/0492H01M 10/0525Y10S977/762C23C 14/34B82Y 20/00B01J 20/28007B82Y 30/00H01M 4/366H01M 2004/027H01L 31/0236H01L 31/028H01L 21/28568H01L 29/04H01L 29/0669H01L 21/02513H01L 31/0352H01L 31/02363H01L 21/02532H01L 21/02488H01L 21/02603H01L 21/02244H01L 21/30604H01L 21/02175H01L 21/3086H01L 21/02307H01L 21/02282H01L 29/16H01L 21/2855H01L 21/02118H01L 21/0234H01L 21/32134H01L 29/0676H01L 21/02164
79
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A nanowire array comprising polycrystalline silicon, wherein the nanowires of the nanowire array have their lengthwise directions disposed at a non-zero angle to a polycrystalline silicon substrate, wherein the array is formed by etching the polycrystalline silicon substrate, wherein the nanowires in the nanowire array have diameters below 150 nm, and wherein the nanowire array is incorporated into a solar cell.
2 . The nanowire array of claim 1 , wherein the nanowires in the nanowire array have diameters less than 125 nm.
3 . The nanowire array of claim 1 , wherein the nanowires in the nanowire array have diameters less than 100 nm.
4 . The nanowire array of claim 1 , wherein nanowires in the nanowire array have diameters less than 70 nm.
5 . The nanowire array of claim 1 , wherein the nanowires in the nanowire array have diameters less than 50 nm.
6 . The nanowire array of claim 1 , wherein the polysilicon nanowires are at an angle from the substrate which is different from perpendicular
7 . A nanowire array comprising polycrystalline silicon, the nanowires of the array having lengthwise directions disposed at one or more non-zero angles to a substrate composed primarily of polycrystalline silicon, the nanowires having bases in electrical and physical contact with the substrate and having tips free of electrical communication with any electrical contacts other than through the bases, the array having been formed by etching the substrate, the nanowire array being incorporated into a solar cell, the nanowires in the nanowire array having diameters less than 150 nm.
8 . The nanowire array of claim 7 , wherein the nanowires in the nanowire array have diameters less than 125 nm.
9 . The nanowire array of claim 8 , wherein the nanowires in the nanowire array have diameters less than 100 nm.
10 . The nanowire array of claim 9 , wherein nanowires in the nanowire array have diameters less than 70 nm.
11 . The nanowire array of claim 10 , wherein the nanowires in the nanowire array have diameters less than 50 nm.Join the waitlist — get patent alerts
Track US2022254883A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.