Electronic device

Abstract

A device includes an upper metallic layer, a lower layer, and a memory array positioned between the upper and lower layers, wherein the memory electrical characteristic changes when storing data.

What is claimed is: 
     
         1 . A device, comprising:
 a first layer;   a second layer formed next to the first layer to provide data storage, the second layer having a lower layer formed next to the first layer;   a data storage element between the first and second layers; and   a learning network or processing network coupled to the data storage element.   
     
     
         2 . The device of  claim 1 , comprising switching medium disposed in rows and columns. 
     
     
         3 . The device of  claim 1 , further comprising a driver circuit for selectively controlling first signal electrodes or second signal electrodes. 
     
     
         4 . The device of  claim 3 , wherein the circuit includes one or more of a sense amplifier, an input-output buffer, an X address decoder, a Y address decoder, and an address buffer. 
     
     
         5 . The device of  claim 1 , wherein the substrate includes a silicon-on-insulator wafer. 
     
     
         6 . The device of  claim 1 , wherein the array comprises a memory. 
     
     
         7 . The device of  claim 1 , comprising multiple levels of stacked cells each having a switching medium sandwiched between the upper and lower layers. 
     
     
         8 . The device of  claim 1 , wherein the nano sensor is compatible with CMOS fabrication. 
     
     
         9 . The device of  claim 1 , further comprising an array of redundant sensor elements. 
     
     
         10 . The device of  claim 1 , comprising gold electrodes where the nano-sensors self-assemble. 
     
     
         11 . The device of  claim 1  comprising a permeable layer is formed above the nano-sensors to protect the nano sensor array and semiconductor elements while allowing the gas, chemical or biological object to get to the nano sensor array. 
     
     
         12 . The device of  claim 11 , wherein, the layer is a gas sensitive film containing or covering nano sensors and when the gas sensitive film is exposed to different the gas, chemical or biological object, a resistance changes. 
     
     
         13 . The device of  claim 11 , wherein for sensing air quality, comprising a sensor film readily oxidized (by NO 2  or O 2 ) or reduced (by CO or NH 3 ). 
     
     
         14 . The device of  claim 1 , comprising a matrix film on the nano sensor array, wherein upon oxidation or reduction, a physical parameter of the matrix film changes to measure gas concentration. 
     
     
         15 . The device of  claim 1 , wherein the nano sensor array is ultrasonically activated to detect the gas, chemical or biological object. 
     
     
         16 . The device of  claim 1 , wherein the nano sensor array is deposited over an ultrasonic vibrator. 
     
     
         17 . The device of  claim 16 , wherein when the gas, chemical or biological object is absorbed by the nano sensor array and change mechanical property that influence vibration amplitude or phase and detected by monitoring vibrational characteristics of an oscillator. 
     
     
         18 . The device of  claim 17 , wherein bulk wave detection is used to detect mass loading that occurs when minute quantities of materials are deposited over the surface of the oscillator. 
     
     
         19 . A device, comprising:
 a resistive, optical or magnetic nano memory; and   a neural network receiving data from the nano memory to be trained to recognize data from the memory.   
     
     
         20 . A electronic device, comprising:
 a first layer fabricated in silicon;   a second layer formed next to the first layer to provide data storage, the second layer having a lower layer formed next to the first layer; a resistive element; and an upper layer formed next to the resistive element, wherein resistance changes to store data.