Silicon Carbide Devices, Semiconductor Devices and Methods for Forming Silicon Carbide Devices and Semiconductor Devices

Abstract

A silicon carbide device includes a semiconductor substrate comprising a body region and transistor cell that comprises a source region, and a titanium carbide field electrode of the transistor cell, wherein the titanium carbide field electrode is connected to a reference voltage metallization structure or connectable to the reference voltage metallization structure by a switching device, wherein the reference voltage metallization is connected to a fixed voltage that is independent from a gate voltage of the transistor cell.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor substrate comprising a body region and transistor cell that comprises a source region; and   a titanium carbide field electrode of the transistor cell,   wherein the titanium carbide field electrode is connected to a reference voltage metallization structure or connectable to the reference voltage metallization structure by a switching device, and   wherein the reference voltage metallization structure is independent from a gate voltage of the transistor cell.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the titanium carbide field electrode is located in a trench, and wherein the trench extends from a surface of the semiconductor substrate into the semiconductor substrate. 
     
     
         3 . The semiconductor device of  claim 2 , further comprising a titanium carbide gate electrode of the transistor cell located in the trench. 
     
     
         4 . The semiconductor device of  claim 3 , wherein the transistor cell has a breakdown voltage of more than 100V. 
     
     
         5 . The semiconductor device of  claim 2 , wherein the titanium carbide field electrode comprises a titanium carbide layer that is directly adjacent to a field electrode insulation layer of the transistor cell and having a thickness of at least 50 nm. 
     
     
         6 . The semiconductor device of  claim 2 , wherein a length of the trench is at least 10 times a width of the trench. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the semiconductor device comprises a plurality of columnar trenches surrounded by a gate trench, wherein each of the columnar trenches comprises one of the field electrodes, wherein the gate trench comprises a gate electrode, and wherein a maximum depth of each of the columnar trenches is at least two times a maximum depth of the gate trench.