US2022246708A1PendingUtilityA1

Method of manufacturing metal oxide film and display device including metal oxide film

Assignee: SAMSUNG DISPLAY CO LTDPriority: Oct 13, 2017Filed: Apr 20, 2022Published: Aug 4, 2022
Est. expiryOct 13, 2037(~11.2 yrs left)· nominal 20-yr term from priority
H10P 14/6319H10P 14/69395H10P 14/69394H10P 14/6339H10P 14/6336H10P 14/6314H10P 14/668H10P 14/69392H10P 14/6938H10K 59/1216H10D 86/481H10D 86/451H10D 86/423H10D 86/60H10D 86/40H10D 1/692C23C 16/517C23C 16/405H01L 28/60H01L 21/02244H01L 51/5206H01L 21/0228H01L 21/02205H01L 21/02189H01L 27/1255H01L 2251/303H01L 27/1214H01L 21/02274H01L 2227/323H01L 27/1225H01L 21/02181H01L 21/02186H01L 21/02252H01L 27/1248H01L 27/3265H01J 37/32449H01J 37/32137C23C 16/515C23C 16/513H10K 2102/00H10K 50/81H10K 59/1201
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Claims

Abstract

A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A display device comprising:
 a substrate; and   a metal oxide film disposed on the substrate,   wherein the metal oxide film has an amorphous phase, a thickness of about 20 nanometers to about 130 nanometers, and a dielectric constant of about 10 to about 50.   
     
     
         2 . The display device of  claim 1 , further comprising a first electrode and a second electrode disposed with the metal oxide film interposed between the first electrode and the second electrode, wherein the first electrode, the second electrode, and the metal oxide film constitute a capacitor. 
     
     
         3 . The display device of  claim 2 , wherein the thickness of the metal oxide film is about 90 nanometers to about 130 nanometers. 
     
     
         4 . The display device of  claim 2 , further comprising an insulating film disposed between the second electrode and the metal oxide film. 
     
     
         5 . The display device of  claim 4 , wherein the insulating film comprises at least one of silicon oxide, silicon nitride, and silicon oxynitride. 
     
     
         6 . The display device of  claim 5 , wherein the thickness of the metal oxide film is about 60 nanometers to about 80 nanometers. 
     
     
         7 . The display device of  claim 6 , wherein a thickness of the insulating film is about 30 nanometers to about 50 nanometers. 
     
     
         8 . The display device of  claim 1 , wherein the metal oxide film comprises at least one of zirconium oxide, hafnium oxide, and titanium oxide. 
     
     
         9 . The display device of  claim 1 , further comprising:
 a transparent electrode disposed on the metal oxide film;   an organic light emitting layer disposed on the transparent electrode; and   a common electrode disposed on the organic light emitting layer.   
     
     
         10 . An apparatus for manufacturing a metal oxide film, the apparatus comprising:
 a chamber;   a susceptor which is disposed inside the chamber and configured to support a substrate;   a shower head which faces the susceptor; and   a power supply unit which supplies radio frequency power to the shower head,   wherein a plasma ON state in which electric power is supplied to the shower head and a plasma OFF state in which no electric power is supplied to the shower head are defined and alternate with each other, wherein a plasma region is provided between the shower head and the susceptor in the plasma ON state.   
     
     
         11 . The apparatus of  claim 10 , wherein a time interval of the plasma ON state and a time interval of the plasma OFF state are equal. 
     
     
         12 . The apparatus of  claim 10 , wherein a pressure inside the chamber is about 0.1 torr to about 10 torr, and a temperature inside the chamber is about 100 degrees Celsius to about 400 degrees Celsius.

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