Stacked Integrated Circuit Structure and Method of Forming

Abstract

A semiconductor device and a method of forming the device are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.

What is claimed is: 
     
         1 . A method comprising:
 placing a substrate over a first die and a second die, the substrate partially overlapping the first die and the second die, the substrate electrically connected to the first die and the second die;   forming molding material along sidewalls of the first die, the second die, and the substrate;   drilling a first opening and a second opening in the molding material, the first opening over the first die, the second opening over the second die;   forming a first through via in the first opening and a second through via in the second opening; and   forming a first conductive feature and a second conductive feature over the molding material, the first through via electrically connecting the first conductive feature to the first die, the second through via electrically connecting the second conductive feature to the second die.   
     
     
         2 . The method of  claim 1 , wherein the first opening and the second opening are drilled in the molding material with laser drilling. 
     
     
         3 . The method of  claim 1 , wherein the substrate comprises metal connections with a pitch of about 0.1 μm to about 20 μm. 
     
     
         4 . The method of  claim 1 , wherein the substrate is bonded to the first die and the second die using micro bump connectors. 
     
     
         5 . The method of  claim 1 , wherein the substrate is in a face-to-face orientation with the first die and the second die. 
     
     
         6 . The method of  claim 1  further comprising:
 grinding the molding material, a top surface of the molding material being coplanar with a top surface of the first through via and a top surface of the second through via. 
 
     
     
         7 . The method of  claim 1 , wherein the substrate comprises a third through via, the method further comprising:
 forming a third conductive feature over the substrate, the third through via electrically connecting the third conductive feature to the substrate; and   grinding the molding material, a top surface of the molding material being coplanar with a top surface of the first through via, a top surface of the second through via, and a top surface of the third through via.   
     
     
         8 . The method of  claim 1 , wherein the substrate is an interposer. 
     
     
         9 . A method comprising:
 connecting a substrate to a first die and a second die, the substrate partially overlapping the first die and the second die, the first die comprising first contacts, the second die comprising second contacts;   forming a molding material around the substrate;   after forming the molding material, forming a first opening and a second opening in the molding material, the first opening exposing a first contact of the first contacts, the second opening exposing a second contact of the second contacts; and   forming a first through via in the first opening and a second through via in the second opening, the first through via connected to the first contact, the second through via connected to the second contact.   
     
     
         10 . The method of  claim 9  further comprising:
 forming a first connector and a second connector over the molding material, the first connector connected to the first through via, the second connector connected to the second through via. 
 
     
     
         11 . The method of  claim 9 , wherein forming the first opening and the second opening in the molding material comprises:
 drilling the first opening and the second opening in the molding material with laser drilling.   
     
     
         12 . The method of  claim 9 , wherein the substrate is positioned so that a center point of the substrate overlies an area between the first die and the second die. 
     
     
         13 . The method of  claim 9 , wherein connecting the substrate to the first die and the second die comprises:
 connecting the substrate to the first contacts and the second contacts using micro bump connectors.   
     
     
         14 . The method of  claim 13 , wherein the micro bump connectors have a pitch of about 0.1 μm to about 20 μm. 
     
     
         15 . The method of  claim 9 , wherein the substrate is in a face-to-face orientation with the first die and the second die. 
     
     
         16 . The method of  claim 9 , wherein the substrate comprises a third through via. 
     
     
         17 . A method comprising:
 connecting a substrate to first contacts of a first die and to second contacts of a second die using micro bump connectors, the substrate being in a face-to-face orientation with the first die and the second die, the micro bump connectors having a pitch of about 0.1 μm to about 20 μm;   forming molding material along sidewalls of the first die, the second die, and the substrate;   drilling an opening in the molding material with laser drilling;   forming a first through via in the opening, the first through via extending through the molding material; and   forming a first conductive feature over the molding material, the first through via electrically connecting the first conductive feature to one of the first contacts of the first die.   
     
     
         18 . The method of  claim 17 , wherein the substrate comprises a second through via, the method further comprising:
 forming a second conductive feature over the substrate, the second through via electrically connecting the second conductive feature to the substrate.   
     
     
         19 . The method of  claim 17  further comprising:
 grinding the molding material, a top surface of the molding material being coplanar with a top surface of the first through via and a top surface of the substrate. 
 
     
     
         20 . The method of  claim 17 , wherein the substrate is an interposer.