Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric

Abstract

Embodiments of the invention include a microelectronic device that includes a first silicon based substrate having compound semiconductor components. The microelectronic device also includes a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.

What is claimed is: 
     
         1 . A microelectronic device comprising:
 a first silicon semiconductor substrate having cavities therein, the first silicon semiconductor substrate having compound semiconductor components embedded in the cavities therein, the first silicon semiconductor substrate having a resistivity below 1 ohm cm, and the first silicon semiconductor substrate having a footprint;   a second substrate coupled to the first silicon semiconductor substrate, the second substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher; and   a plurality of interconnects coupled directly to the second substrate, wherein one or more of the plurality of interconnects are outside of the footprint of the first silicon semiconductor substrate.   
     
     
         2 . The microelectronic device of  claim 1 , wherein the first silicon semiconductor substrate has a resistivity below 0.1 ohm cm. 
     
     
         3 . The microelectronic device of  claim 1 , wherein the first silicon semiconductor substrate has a resistivity below 0.01 ohm cm. 
     
     
         4 . The microelectronic device of  claim 1 , further comprising:
 at least one integrated passive die (IPD) coupled to at least one of the first and second substrates, the IPD includes passives for passive matching networks.   
     
     
         5 . The microelectronic device of  claim 4 , further comprising:
 an overmolded component at least partially surrounding the at least one IPD, the overmolded component to integrate the at least IPD with the first silicon semiconductor substrate.   
     
     
         6 . The microelectronic device of  claim 5 , further comprising:
 at least one thru mold connection formed in the overmolded component to provide at least one electrical connection between the first silicon semiconductor substrate and the second substrate.   
     
     
         7 . The microelectronic device of  claim 1 , wherein the compound semiconductor components include at least one of devices, high output power transistors, and RF circuitry formed with compound semiconductor materials. 
     
     
         8 . The microelectronic device of  claim 7 , wherein the compound semiconductor components include at least one of devices and circuitry formed with GaN materials. 
     
     
         9 . The microelectronic device of  claim 1 , wherein the microelectronic device comprises a 5G package architecture for 5G communications. 
     
     
         10 . A microelectronic device comprising:
 a first silicon semiconductor substrate having cavities therein, the first silicon semiconductor substrate having compound semiconductor components embedded in the cavities therein, the first silicon semiconductor substrate having a resistivity below 1 ohm cm, and the first silicon semiconductor substrate having a footprint;   a second substrate coupled to the first silicon semiconductor substrate, the second substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 15 GHz or higher; and   a plurality of interconnects coupled directly to the second substrate, wherein one or more of the plurality of interconnects are outside of the footprint of the first silicon semiconductor substrate.   
     
     
         11 . The microelectronic device of  claim 10 , wherein the first silicon semiconductor substrate has a resistivity below 0.1 ohm cm. 
     
     
         12 . The microelectronic device of  claim 10 , wherein the first silicon semiconductor substrate has a resistivity below 0.01 ohm cm. 
     
     
         13 . The microelectronic device of  claim 10 , further comprising:
 at least one integrated passive die (IPD) coupled to at least one of the first and second substrates, the IPD includes passives for passive matching networks.   
     
     
         14 . The microelectronic device of  claim 13 , further comprising:
 an overmolded component at least partially surrounding the at least one IPD, the overmolded component to integrate the at least IPD with the first silicon semiconductor substrate.   
     
     
         15 . The microelectronic device of  claim 14 , further comprising:
 at least one thru mold connection formed in the overmolded component to provide at least one electrical connection between the first silicon semiconductor substrate and the second substrate.   
     
     
         16 . The microelectronic device of  claim 10 , wherein the compound semiconductor components include at least one of devices, high output power transistors, and RF circuitry formed with compound semiconductor materials. 
     
     
         17 . The microelectronic device of  claim 16 , wherein the compound semiconductor components include at least one of devices and circuitry formed with GaN materials. 
     
     
         18 . The microelectronic device of  claim 10 , wherein the microelectronic device comprises a 5G package architecture for 5G communications. 
     
     
         19 . A microelectronic device comprising:
 a first silicon semiconductor substrate having cavities therein, the first silicon semiconductor substrate having compound semiconductor components embedded in the cavities