Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process

Abstract

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

What is claimed is: 
     
         1 . A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a factory interface;   a laser scribe apparatus coupled with the factory interface and comprising a laser assembly configured to provide an actively-focused laser beam; and   a plasma etch chamber coupled with the factory interface.   
     
     
         2 . The system of  claim 1 , wherein the laser assembly is configured to provide the actively-focused laser beam at a lowered position over a trough position of a semiconductor wafer. 
     
     
         3 . The system of  claim 1 , wherein the laser assembly is configured to provide the actively-focused laser beam at a raised position over a crest position of a semiconductor wafer. 
     
     
         4 . The system of  claim 1 , wherein the laser scribe apparatus is configured to pre-map a topography of a semiconductor wafer or a topography of a chuck for supporting a semiconductor wafer, or both. 
     
     
         5 . The system of  claim 1 , wherein the laser assembly comprises a Gaussian source laser beam. 
     
     
         6 . The system of  claim 1 , wherein the laser assembly comprises a femto-second source laser beam. 
     
     
         7 . A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
 a deposition chamber for forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits, and the semiconductor wafer having a top surface;   a camera for pre-mapping a topography of an entirety of the semiconductor wafer in regions between the integrated circuits;   a laser assembly for, subsequent to pre-mapping the entirety of the semiconductor wafer, patterning the mask with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing the regions of the semiconductor wafer between the integrated circuits, wherein the actively-focused laser beam laser scribing process comprises moving laser optics along a vertical direction relative to the top surface of the semiconductor wafer to compensate for variations in the pre-map topography; and   a plasma etch chamber for plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.   
     
     
         8 . The system of  claim 7 , wherein the laser assembly is configured to provide an actively-focused laser beam at a lowered position over a trough position of a semiconductor wafer. 
     
     
         9 . The system of  claim 7 , wherein the laser assembly is configured to provide an actively-focused laser beam at a raised position over a crest position of a semiconductor wafer. 
     
     
         10 . The system of  claim 7 , wherein the laser assembly comprises a Gaussian source laser beam. 
     
     
         11 . The system of  claim 7 , wherein the laser assembly comprises a femto-second source laser beam.