Component and Method of Manufacturing a Component Using an Ultrathin Carrier

Abstract

A system and method for manufacturing a packaged component are disclosed. An embodiment comprises forming a plurality of components on a carrier, the plurality of components being separated from each other by kerf regions on a front side of the carrier and forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions. The method further comprises generating the component by separating the carrier.

What is claimed is: 
     
         1 . A method for manufacturing a component, the method comprising:
 providing a carrier comprising a plurality of components, the plurality of components being separated from each other by kerf regions on a front side of the carrier;   forming a metal pattern on a backside of the carrier, wherein the metal pattern covers the backside of the carrier except over regions corresponding to the kerf regions, and wherein the metal pattern comprises free standing metal blocks separated by the regions corresponding to the kerf regions wherein forming the metal pattern comprises forming a metal seed layer and electroplating a metal of the metal pattern on the metal seed layer;   forming an under-layer between the seed layer and a substrate of the component, wherein the under-layer comprises a single titanium layer providing a combined metal adhesion layer and metal barrier layer; and   separating the carrier along the kerf regions into single components.   
     
     
         2 . The method according to  claim 1 , wherein the metal pattern comprises copper (Cu). 
     
     
         3 . The method according to  claim 1 , wherein a substrate of the component and the metal pattern comprises about the same thickness. 
     
     
         4 . The method according to  claim 1 , wherein a substrate of the component comprises a thickness of about 20 μm or less, and wherein the metal pattern comprises a thickness of about 20 μm or more. 
     
     
         5 . The method according to  claim 1 , wherein separating the component from the carrier comprises laser cutting the carrier along the regions. 
     
     
         6 . A method for manufacturing a component, the method comprising:
 forming a plurality of components on a carrier;   forming a metal pattern on a backside of the carrier, the metal pattern comprising free standing metal blocks separated by spaces, wherein forming the metal pattern comprises forming a metal seed layer and plating the metal pattern; and   forming an under-layer between the metal seed layer and a substrate of the component, wherein the under-layer comprises a single layer of titanium, and wherein the seed layer comprises the same material as the metal pattern; and   separating the component from the carrier along the spaces.   
     
     
         7 . The method according to  claim 6 , wherein the under-layer comprises an adhesion layer. 
     
     
         8 . The method according to  claim 6 , wherein the under-layer comprises a barrier layer. 
     
     
         9 . The method according to  claim 6 , wherein the metal pattern comprises copper (Cu). 
     
     
         10 . The method according to  claim 6 , wherein the substrate of the component comprises a thickness of about 20 μm or less, and wherein the metal pattern comprises a thickness of about 20 μm or more. 
     
     
         11 . The method according to  claim 6 , wherein separating the component from the carrier comprises laser cutting the carrier. 
     
     
         12 . The method according to  claim 6 , further comprising placing the component on a leadframe, and encapsulating the component and at least a portion of the leadframe. 
     
     
         13 . The method according to  claim 12 , wherein placing the component on the leadframe comprises wire bonding or clip bonding the component to the leadframe. 
     
     
         14 . A method of manufacturing a wafer, the method comprising:
 forming kerf regions and chips on a first main surface of the wafer;   forming a metal pattern on a second main surface of the wafer, wherein the metal pattern covers the second main surface of the wafer except over regions corresponding to the kerf regions; and   forming an under-layer interposed between the metal pattern and the wafer, wherein the under-layer comprises a single titanium layer.   
     
     
         15 . The method of  claim 14 , wherein the under-layer comprises a combined metal adhesion layer and metal barrier layer. 
     
     
         16 . The method according to  claim 14 , wherein the metal pattern comprises copper (Cu). 
     
     
         17 . The method according to  claim 14 , forming the metal pattern comprises forming a seed layer over the second main surface of the wafer, patterning a photoresist over the seed layer, and forming the metal pattern in a metal bath. 
     
     
         18 . A packaged semiconductor device comprising:
 a carrier;   a component disposed on the carrier, the component comprising a substrate having a thickness of about 40 μm or less and a metal block;   a single titanium layer connecting the component and the metal block, the single titanium layer comprising a combined metal adhesion layer and a metal barrier layer;   a connection layer connecting the carrier and the component;   a conductive wire or a conductive clip connecting a component contact pad of the component with a carrier contact pad of the carrier; and   an encapsulant encapsulating the component.   
     
     
         19 . The packaged semiconductor device according to  claim 18 , wherein the metal block is a copper (Cu) block. 
     
     
         20 . The packaged semiconductor device according to  claim 19 , wherein the connection layer is a solder paste.