Bonding materials of dissimilar coefficients of thermal expansion

Abstract

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

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         17 . A method comprising:
 positioning a chip to a location of a wafer, the wafer comprising a temperature driver therein, the temperature driver comprising a plurality of individually addressable units;   bonding the chip to the wafer by changing a temperature of the location using the individually addressable units, without changing a temperature of another location of the wafer using the individually addressable units.   
     
     
         18 . The method of  claim 17 , wherein the chip is part of an X-ray absorption layer of an X-ray detector and the wafer is part of an electronics layer of the X-ray detector; wherein the X-ray absorption layer is configured to absorb X-ray photons and the electronics layer comprises an electronics system configured to process or interpret signals generated by the X-ray photons. 
     
     
         19 . The method of  claim 17 , wherein the chip comprises a III-V semiconductor and the wafer comprises silicon. 
     
     
         20 . The method of  claim 17 , wherein the temperature of the location is changed such that solder bumps at the location are melted.