Integrated Assemblies Having Semiconductor Oxide Channel Material, and Methods of Forming Integrated Assemblies

Abstract

Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.

I/we claim: 
     
         1 . An integrated assembly, comprising:
 a gate material;   an insulative material adjacent to the gate material; and   a polycrystalline channel region proximate the gate material and spaced from the gate material by the insulative material; wherein a carrier flow is induced along a first direction in response to an electric field along the gate material; individual grains of the polycrystalline channel region being peripherally bounded by grain boundaries; at least one of the grain boundaries having a portion which extends along a second direction, with the second direction crossing the first direction of the carrier flow.   
     
     
         2 . The integrated assembly of  claim 1  wherein the individual grains are cubic crystallinity dominated. 
     
     
         3 . The integrated assembly of  claim 1  wherein the semiconductor oxide is predominately of cubic crystallinity. 
     
     
         4 . The integrated assembly of  claim 1  wherein the gate material, the insulative material and the polycrystalline channel are supported by a semiconductor base having a horizontally-extending upper surface, and wherein the carrier flow extends substantially parallel relative to the horizontally-extending upper surface. 
     
     
         5 . The integrated assembly of  claim 1  wherein the gate material, the insulative material and the polycrystalline are supported by a semiconductor base having a horizontally-extending upper surface, and wherein the carrier flow extends substantially orthogonally relative to the horizontally-extending upper surface. 
     
     
         6 . The integrated assembly of  claim 1  wherein the polycrystalline channel comprises one or more of indium, zinc, tin and gallium. 
     
     
         7 . An integrated assembly, comprising:
 a gate material;   an insulative material adjacent to the gate material; and   an oxide material adjacent to the insulative material; the oxide material comprising one or more of indium, zinc, tin and gallium, wherein a carrier flow is induced along a first direction in response to an electric field along the gate material; the oxide material having at least one grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the oxide material; the carrier flow being within the intervening region and substantially parallel to said at least one grain boundary.   
     
     
         8 . The integrated assembly of  claim 7  wherein individual grains of the oxide material are cubic crystallinity dominated. 
     
     
         9 . The integrated assembly of  claim 7  wherein the oxide material is predominately of cubic crystallinity. 
     
     
         10 . The integrated assembly of  claim 7  wherein the gate material, insulative material and oxide material are supported by a semiconductor base having a horizontally-extending upper surface, and wherein the carrier flow extends substantially parallel relative to the horizontally-extending upper surface. 
     
     
         11 . The integrated assembly of  claim 7  wherein the gate material, insulative material and oxide material are supported by a semiconductor base having a horizontally-extending upper surface, and wherein the carrier flow extends substantially orthogonally relative to the horizontally-extending upper surface. 
     
     
         12 . The integrated assembly of  claim 7  wherein the oxide material includes indium, zinc and gallium. 
     
     
         13 . The integrated assembly of  claim 12  wherein the indium, zinc and gallium are each present in the semiconductor oxide to a metal atomic percent, and wherein:
 the metal atomic percent of the indium is within a range of from about 18 to about 24; 
 the metal atomic percent of the gallium is within a range of from about 47 to about 53; and 
 the metal atomic percent of the zinc is within a range of from about 26 to about 32. 
 
     
     
         14 . The integrated assembly of  claim 12  wherein the indium, zinc and gallium are each present in the semiconductor oxide to a metal atomic percent, and wherein:
 the metal atomic percent of the indium is about 21; 
 the metal atomic percent of the gallium is about 50; and 
 the metal atomic percent of the zinc is about 29. 
 
     
     
         15 . An integrated assembly, comprising:
 a semiconductor oxide extending along a first direction, the semiconductor oxide having first and second opposing sidewall surfaces along a cross-section;   a first region of an insulative material adjacent to the first sidewall surface, and a second region of the insulative material adjacent to the second sidewall surface;   a first region of a gate material adjacent to the first region of the insulative material and spaced from the first sidewall surface by at least the first region of the insulative material, and a second region of the gate material along the second region of the insulative material and spaced from the second sidewall surface by at least the second region of the insulative material; and   wherein carrier flow within the semiconductor oxide is induced in response to electric fields along the first and second regions of the gate material, with the carrier flow being along the first direction; wherein individual grains of the semiconductor oxide are peripherally bounded by grain boundaries; and wherein at least one of the grain boundaries has a portion which extends along a second direction, with the second direction crossing the first direction of the carrier flow.   
     
     
         16 . The integrated assembly of  claim 15  wherein the individual grains are cubic crystallinity dominated. 
     
     
         17 . The integrated assembly of  claim 15  wherein the semiconductor oxide is predominately of cubic crystallinity. 
     
     
         18 . The integrated assembly of  claim 15  wherein the semiconductor oxide extends along the first directed between a first conductive contact and a second conductive contact, and further comprising a digit line coupled with one of the first and second conductive contacts, and comprising a charge-storage device coupled with the other of the first and second conductive contacts. 
     
     
         19 . The integrated assembly of  claim 18  wherein:
 the semiconductor oxide, the first and second regions of the insulative material; and the first and second regions of the gate material together form an access device; 
 the access device and the charge-storage device together form a memory device; and 
 said memory device is one of many substantially identical memory devices within a memory array.