Device measuring a physical state of a material by spectrum and a method thereof

Abstract

The present invention is a device and a method thereof measuring a physical state of a material by spectrum, the device comprising: a first action path where a material to be measured is contained; a detecting unit detecting a spectrum; and a processing unit obtaining a deposition state relating to the material to be measured based on the spectrum. An advance monitoring can be supplied when a deposit is formed by the present invention, therefore, the deposition process can be observed and/or controlled immediately, and the yield and degree of automation will be greatly improved.

What is claimed is: 
     
         1 . A device measuring a physical state of a material by spectrum, comprising:
 a first action path where a material to be measured is contained in;   a detecting unit detecting a spectrum; and   a processing unit obtaining a deposition state relating to the material to be measured based on the spectrum.   
     
     
         2 . A device measuring a physical state of a material by spectrum as mentioned in  claim 1 , wherein the spectrum in the first action path is detected by the detecting unit. 
     
     
         3 . A device measuring a physical state of a material by spectrum of  claim 1 , wherein the first action path is communicated with a second action path, at least part of the material to be measured comes from the second action path, and the spectrum in the second action path is detected by the detecting unit. 
     
     
         4 . A device measuring a physical state of a material by spectrum as mentioned in  claim 1 , wherein the first action path is communicated with a second action path via a tube, at least parts of the material to be measured come from the second action path via the tube, and the spectrum in the tube can be detected by the detecting unit. 
     
     
         5 . A device measuring a physical state of a material by spectrum as mentioned in  claim 1 , wherein at least parts of the material to be measured are in a plasma state. 
     
     
         6 . A method measuring a physical state of a material by spectrum, comprising:
 detecting a spectrum; and   obtaining a deposition state relating to a material to be measured based on the spectrum.   
     
     
         7 . A method measuring a physical state of a material by spectrum as mentioned in  claim 6 , wherein the spectrum is detected from a first action path. 
     
     
         8 . A method measuring a physical state of a material by spectrum as mentioned in  claim 6 , wherein the spectrum is detected from a second action path communicated with a first action path. 
     
     
         9 . A method measuring a physical state of a material by spectrum as mentioned in  claim 6 , wherein the spectrum is detected from a tube communicated with a first action path and a second action path. 
     
     
         10 . A method measuring a physical state of a material by spectrum as mentioned in  claim 6 , further comprising controlling an action condition based on a variation of the spectrum relating to the material to be measured after detecting the spectrum. 
     
     
         11 . A method measuring a physical state of a material by spectrum as mentioned in  claim 6 , wherein at least parts of the material to be measured are in a plasma state.