Optoelectronic Device Mounting Structure with Embedded Heatsink Element

Abstract

A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.

What is claimed is: 
     
         1 . A device comprising:
 an optoelectronic device for generating ultraviolet radiation, the optoelectronic device including a set of electrodes;   a mounting structure for the optoelectronic device, wherein the mounting structure includes:
 a body formed of an insulating material, wherein the optoelectronic device is located on a first surface of the body; and 
 an embedded heatsink located within the body; 
   a set of metal contacts located between the body of the mounting structure and the set of electrodes;   a plurality of conductive members located on a surface of the body opposite the first surface, wherein each metal contact in the set of metal contacts is electrically connected to an electrode in the set of electrodes; and   a cooling channel located between each of the plurality of conductive members, the cooling channel configured to move air between the plurality of conductive members.   
     
     
         2 . The device of  claim 1 , wherein the optoelectronic device is an ultraviolet light emitting diode. 
     
     
         3 . The device of  claim 1 , wherein the optoelectronic device includes a substrate and a buffer layer, wherein the substrate and the buffer layer are transparent to a target ultraviolet radiation. 
     
     
         4 . The device of  claim 1 , wherein the optoelectronic device further comprises:
 a p-type layer located adjacent to a first electrode in the set of electrodes; and   an n-type layer located adjacent to a second electrode in the set of electrodes, wherein the first electrode and the second electrode are reflective of the ultraviolet radiation and the n-type layer and/or the second electrode form a short period superlattice that is transparent to the ultraviolet radiation.   
     
     
         5 . The device of  claim 1 , wherein the body of the mounting structure includes a via-hole and the embedded heatsink is located within the via-hole, wherein the embedded heatsink is formed of copper. 
     
     
         6 . The device of  claim 1 , wherein the embedded heatsink is soldered to at least one of the plurality of conductive members. 
     
     
         7 . The device of  claim 1 , wherein each electrode in the set of electrodes are electrically isolated from one another. 
     
     
         8 . The device of  claim 7 , wherein each electrode in the set of electrodes are electrically isolated by an insulator layer that is transparent to ultraviolet radiation. 
     
     
         9 . The device of  claim 8 , further comprising a thermally conductive filler material located adjacent to the insulator layer, wherein the thermally conductive filler material is reflective to ultraviolet radiation. 
     
     
         10 . A device comprising:
 an optoelectronic device including:
 an active region configured to generate ultraviolet radiation; 
 a first electrode and a second electrode located adjacent to the active region; and 
 an insulator layer located adjacent to the first electrode and the second electrode, wherein the insulator layer is transparent to ultraviolet radiation and covers a side surface of both the first electrode and the second electrode; 
   a mounting structure for the optoelectronic device, wherein the mounting structure includes:
 a body formed of an insulating material, wherein the optoelectronic device is located on a first surface of the body; and 
 a via element embedded within the body, wherein the via element is thermally conductive; and 
   a first metal contact located between the body and the first electrode, wherein the first metal contact is electrically connected to the first electrode.   
     
     
         11 . The device of  claim 10 , wherein the optoelectronic device is an ultraviolet light emitting diode. 
     
     
         12 . The device of  claim 10 , wherein the optoelectronic device includes a substrate and a buffer layer, wherein the substrate and the buffer layer are transparent to a target ultraviolet radiation. 
     
     
         13 . The device of  claim 10 , wherein the optoelectronic device further comprises:
 a p-type layer located adjacent to the first electrode; and   an n-type layer located adjacent to the second electrode, wherein the first electrode and the second electrode are reflective of the ultraviolet radiation and the n-type layer and/or the second electrode form a short period superlattice that is transparent to the ultraviolet radiation.   
     
     
         14 . The device of  claim 10 , wherein the via element is located in a via-hole in the body, wherein the via element is formed of copper. 
     
     
         15 . The device of  claim 10 , further comprising a heatsink, wherein the via element is soldered to the heatsink. 
     
     
         16 . The device of  claim 10 , wherein the first electrode and the second electrode are electrically isolated from one another by the insulator layer. 
     
     
         17 . The device of  claim 10 , further comprising a thermally conducive filler material located adjacent to the insulator layer, wherein the thermally conductive filler material is reflective to ultraviolet radiation. 
     
     
         18 . A device array comprising:
 a plurality of optoelectronic devices, each optoelectronic device including a first electrode and a second electrode and configured to generate ultraviolet radiation;   a mounting structure for the plurality of optoelectronic devices, wherein the mounting structure includes:
 a body formed of an insulating material; and 
 a via element embedded within the body, wherein the via element is thermally conductive; and 
   a set of metal contacts located between the body and the first electrode and the second electrode of each optoelectronic device, wherein each metal contact in the set of metal contacts is electrically connected to one of the first electrode or the second electrode of at least one of the plurality of optoelectronic devices, and wherein each optoelectronic device can be individually turned on and off.   
     
     
         19 . The device of  claim 18 , wherein the first electrode and the second electrode of each optoelectronic device are electrically isolated by an insulator layer that is transparent to ultraviolet radiation. 
     
     
         20 . The device of  claim 19 , further comprising a thermally conductive filler material located between adjacent to the insulator layer, wherein the thermally conductive filler material is reflective to ultraviolet radiation.