Method of forming bismuth-containing gallium oxide-based semiconductor film on base material, bismuth-containing gallium oxide-based semiconductor film, and bismuth-containing gallium oxide-based semiconductor component

Abstract

There is provided a method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide. In the method, the temperature of the base material is set to 650° C. to 1,000° C., and the laser intensity is set to 1.0 J/cm2 to 10.0 J/cm2. The bismuth-containing gallium oxide-based semiconductor film of the present disclosure has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to the total of the numbers of atoms of bismuth and gallium and has a β-gallia structure. The bismuth-containing gallium oxide-based semiconductor component of the present disclosure has a base material and the bismuth-containing gallium oxide-based semiconductor film that is laminated on the base material.

What is claimed is: 
     
         1 . A method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide,
 wherein a temperature of the base material is set to 650° C. to 1,000° C.; and   a laser intensity is set to 1.0 J/cm 2  to 10.0 J/cm 2 .   
     
     
         2 . The method according to  claim 1 , wherein in a case where a proportion of the number of atoms of bismuth with respect to a total of the numbers of atoms of bismuth and gallium in the target is denoted by y at %, and the temperature of the base material is denoted by T ° C., Expression (1) is satisfied,
     y≥ 1/(0.52− T/ 2,500)  (1).
 
 
     
     
         3 . The method according to  claim 2 , wherein 5.00≤y≤50.00 is satisfied. 
     
     
         4 . The method according to  claim 1 , wherein the formed bismuth-containing gallium oxide-based semiconductor film has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to a total of the numbers of atoms of bismuth and gallium and has a β-gallia structure. 
     
     
         5 . The method according to  claim 1 , wherein the base material is an alumina base material or a gallium oxide base material. 
     
     
         6 . A bismuth-containing gallium oxide-based semiconductor film, wherein the bismuth-containing gallium oxide-based semiconductor film has a proportion of the number of atoms of bismuth of 0.50 at % to 10.00 at % with respect to a total of the numbers of atoms of bismuth and gallium and has a β-gallia structure. 
     
     
         7 . The bismuth-containing gallium oxide-based semiconductor film according to  claim 6 , wherein a half width of a peak derived from a (−603) plane of the β-gallia structure in an X-ray diffraction 2θ−ω measurement is 0.40° to 1.00°. 
     
     
         8 . The bismuth-containing gallium oxide-based semiconductor film according to  claim 6 , wherein a bandgap energy is 3.8 eV or less. 
     
     
         9 . A bismuth-containing gallium oxide-based semiconductor component comprising:
 a base material; and   the bismuth-containing gallium oxide-based semiconductor film according to  claim 6 , which is laminated on the base material.   
     
     
         10 . The bismuth-containing gallium oxide-based semiconductor component according to  claim 9 , wherein the base material is a gallium oxide base material.