Emissive nanocrystal particle, method of preparing the same and device including emissive nanocrystal particle

Abstract

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

What is claimed is: 
     
         1 . A nanocrystal particle comprising:
 a core comprising a first semiconductor nanocrystal; and   a shell comprising a second semiconductor nanocrystal surrounding the core,   wherein the nanocrystal particle comprises a Group IA element,   the Group IA element comprises lithium, sodium, potassium, rubidium, cesium, or a combination thereof, and   the shell comprises a material comprising a Group III-V compound, a Group II-VI compound, a Group IV-VI compound, a Group IV element or compound, or a combination thereof.   
     
     
         2 . The nanocrystal particle of  claim 1 , wherein the Group IA element is present in a doped state or in a form of a metal salt other than a halide salt. 
     
     
         3 . The nanocrystal particle of  claim 2 , wherein the metal salt comprises an inorganic metal salt comprising phosphate, nitrate, carbonate, or a combination thereof. 
     
     
         4 . The nanocrystal particle of  claim 2 , wherein the metal salt comprises an organic metal salt. 
     
     
         5 . The nanocrystal particle of  claim 4 , wherein the organic metal salt comprises a metal carboxylate, a metal thiolate, or a combination thereof. 
     
     
         6 . The nanocrystal particle of  claim 1 , wherein the Group IA element is present in gaps of a crystal structure of the first semiconductor nanocrystal or is present inside an interstice between lattices of the first semiconductor nanocrystal. 
     
     
         7 . The nanocrystal particle of  claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.05 mol and less than or equal to about 20 mol based on 100 mol of the first semiconductor nanocrystal. 
     
     
         8 . The nanocrystal particle of  claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.03 parts by weight and less than or equal to about 20 parts by weight based on 100 parts by weight of the first semiconductor nanocrystal. 
     
     
         9 . The nanocrystal particle of  claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.001 mol and less than or equal to about 20 mol based on 100 mol of the nanocrystal particle. 
     
     
         10 . The nanocrystal particle of  claim 1 , wherein the Group IA element is present in an amount of greater than or equal to about 0.001 parts by weight and less than or equal to about 20 parts by weight based on 100 parts by weight of the nanocrystal particle. 
     
     
         11 . The nanocrystal particle of  claim 1 , wherein the core comprises a Group III-V compound. 
     
     
         12 . The nanocrystal particle of  claim 11 , wherein the Group III-V compound further comprises a Group II element. 
     
     
         13 . The nanocrystal particle of  claim 11 , wherein the Group III-V compound comprises a binary element compound comprising GaN, GaP, GaAs, GaSb, AIN, AIP, AIAs, AlSb, InN, InP, InAs, InSb, or a combination thereof; a ternary element compound comprising GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AINP, AINAs, AINSb, AIPAs, AIPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, or a combination thereof; or a quaternary element compound comprising GaAINP, GaAINAs, GaAINSb, GaAIPAs, GaAIPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAINP, InAINAs, InAINSb, InAIPAs, InAIPSb, or a combination thereof. 
     
     
         14 . The nanocrystal particle of  claim 1 , wherein
 the Group III-V compound comprises a binary element compound comprising GaN, GaP, GaAs, GaSb, AIN, AIP, AIAs, AlSb, InN, InP, InAs, InSb, or a combination thereof; a ternary element compound comprising GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AINP, AINAs, AINSb, AIPAs, AIPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, or a combination thereof; or a quaternary element compound comprising GaAINP, GaAINAs, GaAINSb, GaAIPAs, GaAIPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAINP, InAINAs, InAINSb, InAIPAs, InAIPSb, or a combination thereof,   the Group II-VI compound comprises a binary element compound comprising CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, MgSe, MgS, or a combination thereof; a ternary element compound comprising CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or a combination thereof; or a quaternary element compound comprising HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or a combination thereof,   the Group IV-VI compound comprises a binary element compound comprising SnS, SnSe, SnTe, PbS, PbSe, PbTe, or a combination thereof; a ternary element compound comprising SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, or a combination thereof; or a quaternary element compound comprising SnPbSSe, SnPbSeTe, SnPbSTe, or a combination thereof, and   the Group IV element or compound comprises an elementary substance comprising Si, Ge, or a combination thereof; or a binary element compound comprising SiC, SiGe, or a combination thereof.   
     
     
         15 . The nanocrystal particle of  claim 1 , wherein the nanocrystal particle has a full width at half maximum of less than or equal to about 45 nanometers in its photoluminescent spectrum. 
     
     
         16 . A composite structure comprising:
 a polymer matrix; and   the nanocrystal particle of  claim 1  dispersed in the polymer matrix.   
     
     
         17 . A device comprising the nanocrystal particle of  claim 1 . 
     
     
         18 . The device of  claim 17 , wherein the device comprises:
 a light source; and   a photoconversion layer disposed on the light source,   wherein the photoconversion layer comprises the nanocrystal particle.   
     
     
         19 . The device of  claim 17 , wherein the device comprises a lower electrode, an upper electrode facing the lower electrode, and an emission layer between the lower electrode and the upper electrode,
 wherein the emission layer comprises the nanocrystal particle.