Interconnect structure

Abstract

An interconnect structure is formed in a semiconductor device. The interconnect structure includes a dielectric layer disposed over a substrate. The dielectric layer includes a region and a plurality of protrusions. The protrusions are distributed in the region. A metal layer is disposed on the dielectric layer. Tops of the protrusions are exposed with respect to the metal layer. Any straight path crossing through a central region of the region is always intersected with a portion of the protrusions.

What is claimed is: 
     
         1 . An interconnect structure formed in a semiconductor device, comprising:
 a dielectric layer disposed over the substrate, wherein the dielectric layer comprises a region and a plurality of protrusions, and the plurality of protrusions are distributed in the region; and   a metal layer disposed on the dielectric layer, wherein tops of the plurality of protrusions are exposed with respect to the metal layer,   wherein any straight path crossing through a central region of the region is always intersected with a portion of the plurality of protrusions.   
     
     
         2 . The interconnect structure of  claim 1 , wherein the plurality of protrusions are regularly distributed to form a plurality of rows in a first direction, and the plurality of protrusions in adjacent two of the plurality of rows are mutually shifted in the first direction. 
     
     
         3 . The interconnect structure of  claim 2 , wherein each of the plurality of protrusions comprises:
 a straight bar extended in the first direction;   a first extension bar at a first side of the straight bar; and   a second extension bar at a second side of the straight bar,   wherein the first extension bar and the second extension bar are extended in directions opposite to each other and intersected with the first direction.   
     
     
         4 . The interconnect structure of  claim 2 , wherein each of the plurality of protrusions comprises:
 a first straight bar extended in the first direction;   a first extension bar at a first end of the first straight bar; and   a second extension bar at a second end of the first straight bar,   wherein the first extension bar and the second extension bar are extended in a second direction, and the second direction is intersected with the first direction.   
     
     
         5 . The interconnect structure of  claim 4 , further comprising:
 a second straight bar extended in the second direction;   a third extension bar at a first end of the second straight bar; and   a fourth extension bar at a second end of the second straight bar,   wherein the third extension bar and the fourth extension bar are extended in the first direction.   
     
     
         6 . The interconnect structure of  claim 2 , wherein each of the plurality of protrusions comprises:
 a first straight bar extended in the first direction; and   a second straight bar extended in the second direction at a side of the first straight bar,   wherein the first direction is intersected with the second direction.   
     
     
         7 . The interconnect structure of  claim 2 , wherein each of the plurality of protrusions comprises:
 a first straight bar extended in the first direction; and   a second straight bar extended in the second direction and intersected with the first straight bar to form a cross structure.   
     
     
         8 . The interconnect structure of  claim 7 , further comprising:
 a first bent structure disposed at a first end of the first straight bar; and   a second bent structure disposed at a second end of the first straight bar.   
     
     
         9 . The interconnect structure of  claim 8 , wherein the first end and the second end are extended in the second direction with respect to the first straight bar. 
     
     
         10 . The interconnect structure of  claim 1 , wherein the plurality of protrusions comprise:
 a bent strip extended in a direction, wherein a bent shape of the bent strip is a pulse signal shape;   a straight bar extended in the direction and adjacent to the bent strip; and   a plurality of extension bars, at a left side and a right side of the straight bar, perpendicular to the direction, and alternately arranged corresponding to a concave folding region of the bent strip.   
     
     
         11 . An interconnect structure formed in a semiconductor device, comprising:
 a metal layer disposed on the substrate, wherein the metal layer has a region and a plurality of slots, and the plurality of slots are distributed in the region,   wherein any straight path crossing through a central region of the region is always intersected with a portion of the plurality of slots.   
     
     
         12 . The interconnect structure of  claim 11 , wherein the plurality of slots are regularly distributed to form a plurality of rows in a first direction, and the plurality of slots in adjacent two of the plurality of rows are mutually shifted in the first direction. 
     
     
         13 . The interconnect structure of  claim 12 , wherein each of the plurality of slots comprises:
 a straight slot extended in the first direction;   a first extension bar at a first side of the straight slot; and   a second extension bar at a second side of the straight slot,   wherein the first extension bar and the second extension bar are extended in directions opposite to each other and intersected with the first direction.   
     
     
         14 . The interconnect structure of  claim 12 , wherein each of the plurality of slots comprises:
 a first straight slot extended in the first direction;   a first extension bar at a first end of the first straight slot; and   a second extension bar at a second end of the first straight slot,   wherein the first extension bar and the second extension bar are extended in a second direction, and the second direction is intersected with the first direction.   
     
     
         15 . The interconnect structure of  claim 14 , further comprising:
 a second straight slot extended in the second direction;   a third extension bar at a first end of the second straight slot; and   a fourth extension bar at a second end of the second straight slot,   wherein the third extension bar and the fourth extension bar are extended in the first direction.   
     
     
         16 . The interconnect structure of  claim 12 , wherein each of the plurality of slots comprises:
 a first straight slot extended in the first direction; and   a second straight slot extended in the second direction at a side of the first straight slot,   wherein the first direction is intersected with the second direction.   
     
     
         17 . The interconnect structure of  claim 12 , wherein each of the plurality of slots comprises:
 a first straight slot extended in the first direction; and   a second straight slot extended in the second direction and intersected with the first straight slot to form a cross structure.   
     
     
         18 . The interconnect structure of  claim 17 , further comprising:
 a first bent structure disposed at a first end of the first straight slot; and   a second bent structure disposed at a second end of the first straight slot.   
     
     
         19 . The interconnect structure of  claim 18 , wherein the first end and the second end are extended in the second direction with respect to the first straight slot. 
     
     
         20 . The interconnect structure of  claim 11 , wherein the plurality of slots comprise:
 a bent slot extended in a direction, wherein a bent shape of the bent slot is a pulse signal shape;   a straight slot extended in the direction and adjacent to the bent slot; and   a plurality of extension bars, at a left side and a right side of the straight slot, perpendicular to the direction, and alternately arranged corresponding to a concave folding region of the bent slot.