Semiconductor device and manufacturing method of semiconductor device

Abstract

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor and a second insulator over a first insulator; a third insulator over the first conductor and the second insulator; a fourth insulator over the third insulator; a first oxide over the fourth insulator; a second oxide and a third oxide over the first oxide; a second conductor in contact with a top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the second oxide, and a top surface of the second oxide; a third conductor in contact with the top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the third oxide, and a top surface of the third oxide; a fourth oxide over the first oxide; a fifth insulator over the fourth oxide; and a fourth conductor over the fifth insulator. The capacitor includes a fifth conductor over the first insulator, the third insulator over the fifth conductor, and the second conductor over the third insulator.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a transistor; and   a capacitor,   wherein the transistor comprises:
 a first insulator; 
 a first conductor and a second insulator over the first insulator; 
 a first oxide and second oxide over the second insulator, 
 a second conductor and a third conductor over the first oxide and the second oxide, 
 a third insulator over the second conductor and the third conductor, 
   wherein the capacitor comprises:
 a fourth conductor over the first insulator; and 
 the second insulator over the fourth conductor, 
   wherein the third conductor is in contact with a top surface of the second oxide,   wherein the second insulator is in contact with a top surface of the first conductor and a top surface of the fourth conductor,   wherein the first conductor and the fourth conductor are formed on the same layer, and   wherein the first conductor and the fourth conductor comprise the same material.   
     
     
         2 . A semiconductor device comprising:
 a transistor; and   a capacitor,   wherein the transistor comprises:
 a first insulator; 
 a first conductor and a second insulator over the first insulator; 
 a first oxide and second oxide over the second insulator, 
 a second conductor and a third conductor over the first oxide and the second oxide, 
 a third insulator over the second conductor and the third conductor, 
   wherein the capacitor comprises:
 a fourth conductor over the first insulator; and 
 the second insulator over the fourth conductor, 
   wherein the third conductor is in contact with a top surface of the second oxide,   wherein the second insulator is in contact with a top surface of the first conductor and a top surface of the fourth conductor,   wherein the first conductor and the fourth conductor are formed on the same layer,   wherein the first conductor and the fourth conductor comprise the same material, and   wherein the first oxide and the second oxide each comprises an oxide comprising, indium, element M, and zinc.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein element M is gallium. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the second insulator comprises any one of aluminum, hafnium, zirconium, and tantalum. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the second insulator comprises any one of aluminum, hafnium, zirconium, and tantalum.