Light emitting diode structure, method of forming the same, and backlight module

Abstract

A light emitting diode structure includes a substrate, a chip disposed on the substrate, a transparent cup wall surrounding the chip disposed on the substrate, a wavelength conversion layer between the transparent cup wall covering the chip, and a reflective layer disposed on the wavelength conversion layer, in which the reflective layer includes a curved bottom surface protruding toward the chip.

What is claimed is: 
     
         1 . A light emitting diode structure, comprising:
 a substrate;   a chip disposed on the substrate;   transparent cup walls disposed on the substrate, wherein the transparent cup walls surround the chip;   a wavelength conversion layer covering the chip between the transparent cup walls; and   a reflective layer disposed on the wavelength conversion layer, wherein the reflective layer comprises a curved bottom surface protruding toward the chip.   
     
     
         2 . The light emitting diode structure of  claim 1 , wherein a transmittance of the transparent cup walls is in a range of 20% to 100%. 
     
     
         3 . The light emitting diode structure of  claim 1 , wherein an angle between an inner wall of the transparent cup walls and the substrate is in a range of 90° to 170°. 
     
     
         4 . The light emitting diode structure of  claim 1 , wherein an outer wall of the transparent cup walls is substantially vertical to the substrate. 
     
     
         5 . The light emitting diode structure of  claim 1 , wherein a thickness from the curved bottom surface of the reflective layer to a top surface of the reflective layer is in a range of 30 μm to 100 μm. 
     
     
         6 . The light emitting diode structure of  claim 1 , wherein an edge thickness of the reflective layer approaches zero. 
     
     
         7 . The light emitting diode structure of  claim 1 , wherein the reflective layer contacts the transparent cup walls, and wherein the wavelength conversion layer is free from being exposed to environment. 
     
     
         8 . The light emitting diode structure of  claim 1 , wherein a reflectance of the reflective layer is in a range of 90% to 100%. 
     
     
         9 . The light emitting diode structure of  claim 1 , wherein the reflective layer comprises a substantially flat top surface. 
     
     
         10 . The light emitting diode structure of  claim 1 , wherein a beam angle of the light emitting diode structure is in a range of 95° to 175°. 
     
     
         11 . A backlight module, comprising:
 a light emitting diode structure, comprising:
 a substrate; 
 a chip disposed on the substrate; 
 transparent cup walls disposed on the substrate, wherein the transparent cup walls surround the chip; 
 a wavelength conversion layer covering the chip between the transparent cup walls; and 
 a reflective layer disposed on the wavelength conversion layer, wherein the reflective layer comprises a curved bottom surface protruding toward the chip; and 
   an optical film disposed over the light emitting diode structure.   
     
     
         12 . The backlight module of  claim 11 , further comprising a wire connecting the chip and the substrate. 
     
     
         13 . The backlight module of  claim 11 , wherein an angle between an inner wall of the transparent cup walls and the substrate is in a range of 90° to 170°. 
     
     
         14 . The backlight module of  claim 11 , wherein the wavelength conversion layer comprises a fluorescent material to emit a second light different from a first light emitted by the chip. 
     
     
         15 . The backlight module of  claim 11 , wherein a central thickness from the curved bottom surface of the reflective layer to a top surface of the reflective layer is in a range of 30 μm to 100 μm. 
     
     
         16 . The backlight module of  claim 11 , wherein a beam angle of the light emitting diode structure is in a range of 95° to 17 5°. 
     
     
         17 . A method of forming a light emitting diode structure, comprising:
 forming transparent cup walls on a substrate;   disposing a chip on the substrate, wherein the transparent cup walls surround the chip;   connecting a wire to the chip   forming a wavelength conversion layer between the transparent cup walls, wherein the wavelength conversion layer covers the chip and comprises a central-recessed top surface; and   forming a reflective layer on the wavelength conversion layer and performing a baking process.   
     
     
         18 . The method of  claim 17 , wherein a difference between a central thickness of the wavelength conversion layer and an edge thickness of the wavelength conversion layer is larger than 30 μm. 
     
     
         19 . The method of  claim 17 , wherein forming the wavelength conversion layer comprises dispensing a material of the wavelength conversion layer between the transparent cup walls. 
     
     
         20 . The method of  claim 17 , wherein the baking process comprises a plurality of heating stages with gradient temperatures.