Method for Fabricating a Semiconductor Device

Abstract

A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate having a first semiconductor device in a first region and a second semiconductor device in a second region;   a stressed oxide layer on the second semiconductor device in the second region;   a silicide blocking layer on the stressed oxide layer in the second region; and   a cap layer on the first semiconductor device in the first region and on the silicide blocking layer in the second region.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first semiconductor device comprises a gate structure, a source region and a drain region in the substrate on opposite sides of the gate structure, and a silicide layer on the source region and the drain region. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the silicide layer is further formed on the gate structure. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the second semiconductor device comprises a transistor or a resistor without silicide formed thereon. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the stressed oxide layer is coextensive with the silicide blocking layer. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the silicide blocking layer comprises silicon nitride, silicon-rich oxide, SiO 2 , SiON, or SiO 2 /SiN/SiO 2  (ONO structure). 
     
     
         7 . The semiconductor device of  claim 1 , wherein the cap layer is a silicon nitride layer or a double-layer structure comprising a silicon nitride layer and a silicon oxide layer positioned vertically below the silicon nitride layer. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the stressed oxide layer is originally grown and never removed.