Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes etching the first film with first gas including carbon and fluorine to form a concave portion in the first film and form a second film in the concave portion. The method further includes treating the second film by using the second film to second gas or second liquid, wherein the second film is treated without plasma.

1 . A semiconductor manufacturing apparatus comprising:
 a container capable of containing a substrate;   a first feeder configured to feed, to the container, gas capable of treating a film on the substrate;   a first device provided between the first feeder and the container, and configured to control a flow rate of the gas fed from the first feeder to the container; and   a first heater provided around a first channel through which the gas is fed from the first device to the container, and configured to heat the gas passing through the first channel.   
     
     
         2 . The apparatus of  claim 1 , further comprising a second heater provided around a second channel through which the gas is fed from the first feeder to the first device, and configured to heat the gas passing through the second channel. 
     
     
         3 . The apparatus of  claim 1 , further comprising:
 a shower head configured to eject the gas into the container; and   a third heater configured to heat the shower head.   
     
     
         4 . The apparatus of  claim 1 , further comprising an annealer configured to adjust a temperature in the container to a predetermined temperature. 
     
     
         5 . The apparatus of  claim 1 , further comprising:
 a second feeder configured to feed, to the container, gas capable of treating the film; and   a second device provided between the second feeder and the container, and configured to control a flow rate of the gas fed from the second feeder to the container.   
     
     
         6 . The apparatus of  claim 5 , further comprising a fourth heater provided around a third channel through which the gas is fed from the second feeder to the second device, and configured to heat the gas passing through the third channel.