Oled display panel and method of manufacturing the same, and oled display apparatus

Abstract

An OLED display panel has a display region including sub-pixel regions. The sub-pixel regions include red sub-pixel regions. The OLED display panel includes: a base, light-emitting devices disposed on the base and located in the red sub-pixel regions, and color resist layers disposed in the red sub-pixel regions and located at light-exit sides of the light-emitting devices. A light-emitting device has a microcavity structure, and a length of the microcavity of the light-emitting device is in a range from 100 nm to 500 nm. The light-emitting device is configured to emit red light. The color resist layer is configured such that a transmittance of light with a wavelength of 585 nm or above is greater than a transmittance of light with a wavelength of below 585 nm.

1 . An OLED display panel having a display region including a plurality of sub-pixel regions, the plurality of sub-pixel regions including red sub-pixel regions; the OLED display panel comprising:
 a base;   light-emitting devices disposed on the base and located in the red sub-pixel regions, a light-emitting device having a microcavity structure, and a length of the microcavity of the light-emitting device being in a range from 100 nm to 500 nm; the light-emitting device being configured to emit red light; and   color resist layers disposed in the red sub-pixel regions and located at light-exit sides of the light-emitting devices, a color resist layer being configured such that a transmittance of light with a wavelength of 585 nm or above is greater than a transmittance of light with a wavelength of below 585 nm.   
     
     
         2 . The OLED display panel according to  claim 1 , wherein the color resist layer is configured such that a transmittance of light with a wavelength of 595 nm or above is greater than a transmittance of light with a wavelength of below 595 nm. 
     
     
         3 . The OLED display panel according to  claim 2 , wherein the color resist layer is configured such that a transmittance of light with a wavelength of 605 nm or above is greater than a transmittance of light with a wavelength of below 605 nm. 
     
     
         4 . The OLED display panel according to  claim 1 , wherein the length of the microcavity of the light-emitting device is greater than 200 nm and less than 500 nm. 
     
     
         5 . The OLED display panel according to  claim 4 , wherein the length of the microcavity of the light-emitting device is greater than 200 nm and less than or equal to 350 nm. 
     
     
         6 . The OLED display panel according to  claim 4 , wherein the length of the microcavity of the light-emitting device is greater than 200 nm and less than or equal to 330 nm. 
     
     
         7 . The OLED display panel according to  claim 4 , wherein the length of the microcavity of the light-emitting device is greater than 200 nm and less than or equal to 300 nm. 
     
     
         8 . The OLED display panel according to  claim 1 , wherein the color resist layer is made of an organic polymer. 
     
     
         9 . The OLED display panel according to  claim 1 , further comprising; an encapsulation layer disposed on a side of the light-emitting device away from the base. 
     
     
         10 . The OLED display panel according to  claim 1 , further comprising; pixel driving circuits disposed between the light-emitting devices and the base, a pixel driving circuit being configured to drive the light-emitting device to emit light. 
     
     
         11 . The OLED display panel according to  claim 1 , wherein the plurality of sub-pixel regions further includes green sub-pixel regions adjacent to the red sub-pixel regions; and
 the color resist layer is also located in a region between the red sub-pixel region and a green sub-pixel region.   
     
     
         12 . The OLED display panel according to  claim 1 , wherein the plurality of sub-pixel regions further includes blue sub-pixel regions adjacent to the red sub-pixel regions; and
 the color resist layer is also located in a region between the red sub-pixel region and a blue sub-pixel region.   
     
     
         13 . An OLED display apparatus, comprising the OLED display panel according to  claim 1 . 
     
     
         14 . A method of manufacturing an OLED display panel, the OLED display panel having a display region including a plurality of sub-pixel regions, the plurality of sub-pixel regions including red sub-pixel regions, the method comprising:
 forming light-emitting devices on a base and in the red sub-pixel regions, a light-emitting device having a microcavity structure, and a length of the microcavity of the light-emitting device being in a range from 100 nm to 500 nm; the light-emitting device being configured to emit red light; and   forming color resist layers in the red sub-pixel regions and at light-exit sides of the light-emitting devices, a color resist layer being configured such that a transmittance of light with a wavelength of 585 nm or above is greater than a transmittance of light with a wavelength of below 585 nm.   
     
     
         15 . The method according to  claim 14 , wherein the light-emitting devices are top-emission light-emitting devices;
 forming the light-emitting devices and the color resist layers includes:   forming the color resist layers on an encapsulation layer; and   encapsulating the light-emitting devices by using the encapsulation layer on which the color resist layers have been formed, so that the color resist layers are located between the light-emitting devices and the encapsulation layer.   
     
     
         16 . The method according to  claim 14 , wherein the light-emitting devices are top-emission light-emitting devices;
 forming the light-emitting devices and the color resist layers includes:   forming the light-emitting devices, an encapsulation layer and the color resist layers sequentially on the base.   
     
     
         17 . The OLED display panel according to  claim 9 , wherein the light-emitting devices are top-emission light-emitting devices, and the color resist layers are arranged on a side of the encapsulation layer away from the light-emitting devices. 
     
     
         18 . The OLED display panel according to  claim 9 , wherein the light-emitting devices are top-emission light-emitting devices, and the color resist layers are arranged between the encapsulation layer and the light-emitting devices. 
     
     
         19 . The OLED display panel according to  claim 9 , wherein the light-emitting devices are bottom-emission light-emitting devices, and the color resist layers, the light-emitting devices and the encapsulation layer are sequentially arranged on the base. 
     
     
         20 . The method according to  claim 14 , wherein the light-emitting devices are bottom-emission light-emitting devices;
 forming the light-emitting devices and the color resist layers includes:   forming the color resist layers, the light-emitting devices and an encapsulation layer sequentially on the base.