Solid-state image sensor and electronic apparatus

Abstract

The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor. A solid-state image sensor according to a first aspect of the present disclosure is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor including: a first photoelectric conversion module that includes a first photoelectric conversion unit configured to perform photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode formed with the first photoelectric conversion unit placed between the first upper electrode and the first lower electrode, and a first spectral correction unit formed between the first upper electrode and the first lower electrode to be stacked on the first photoelectric conversion unit; and a second photoelectric conversion unit configured to perform photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range being different from the first wavelength range. The present disclosure can be applied to, for example, a CMOS image sensor.

1 . A solid-state image sensor, comprising:
 a first photoelectric conversion module that includes:
 a first upper electrode; 
 a first lower electrode; 
 a first photoelectric conversion unit between the first upper electrode and the first lower electrode, wherein
 the first photoelectric conversion unit is configured to execute photoelectric conversion on light in a first wavelength range of incident light incident on the solid-state image sensor; and 
 
 a first spectral correction unit between the first photoelectric conversion unit and the first lower electrode, wherein
 the first spectral correction unit is configured to at least one of:
 extract a carrier from the first photoelectric conversion unit, or 
 block carrier injection from the first lower electrode to the first photoelectric conversion unit, and 
 
 the first spectral correction unit has a light absorption peak in a specific wavelength range. 
 
   
     
     
         2 . The solid-state image sensor according to  claim 1 , wherein
 the first spectral correction unit includes one of a quantum dot material or an organic material.   
     
     
         3 . The solid-state image sensor according to  claim 1 , further comprising a second photoelectric conversion unit configured to execute the photoelectric conversion on the light in a second wavelength range of the incident light, wherein
 the second wavelength range is different from the first wavelength range.   
     
     
         4 . The solid-state image sensor according to  claim 1 , wherein
 the first spectral correction unit is configured to extract a hole from the first photoelectric conversion unit.   
     
     
         5 . The solid-state image sensor according to  claim 1 , wherein
 the first spectral correction unit is further configured to block electron injection from the first lower electrode to the first photoelectric conversion unit.   
     
     
         6 . The solid-state image sensor according to  claim 3 , further comprising a third photoelectric conversion unit configured to execute the photoelectric conversion on the light in a third wavelength range of the incident light, wherein
 the photoelectric conversion is executed on the light in the third wavelength range that has passed through the first photoelectric conversion module and the second photoelectric conversion unit, and   the third wavelength range is different from the first wavelength range and the second wavelength range.   
     
     
         7 . The solid-state image sensor according to  claim 6 , wherein the first upper electrode, the first photoelectric conversion unit, the first spectral correction unit, and the first lower electrode are in sequence in the first photoelectric conversion module from a light incident side of the solid-state image sensor. 
     
     
         8 . The solid-state image sensor according to  claim 6 , wherein
 the first photoelectric conversion module further includes a hole blocking unit, and   the first upper electrode, the hole blocking unit, the first photoelectric conversion unit, the first spectral correction unit, and the first lower electrode are in sequence in the first photoelectric conversion module from a light incident side of the solid-state image sensor.   
     
     
         9 . The solid-state image sensor according to  claim 6 , wherein
 the first photoelectric conversion module further includes a second spectral correction unit, and   the first upper electrode, the second spectral correction unit, the first photoelectric conversion unit, the first spectral correction unit, and the first lower electrode are in sequence in the first photoelectric conversion module from a light incident side of the solid-state image sensor.   
     
     
         10 . The solid-state image sensor according to  claim 3 , further comprising a second photoelectric conversion module that includes:
 a second upper electrode;   a second lower electrode;   a third photoelectric conversion unit between the second upper electrode and the second lower electrode, wherein
 the third photoelectric conversion unit is configured to execute the photoelectric conversion on the light in a third wavelength range of the incident light, 
 the photoelectric conversion is executed on the light in the third wavelength range that has passed through the first photoelectric conversion module, and 
 the third wavelength range is different from the first wavelength range; and 
   a second spectral correction unit between the second upper electrode and the second lower electrode, wherein
 the second spectral correction unit is on the third photoelectric conversion unit, and 
 the second photoelectric conversion unit is further configured to execute the photoelectric conversion on the light in the second wavelength range of the incident light that has passed through the first photoelectric conversion module and the second photoelectric conversion module. 
   
     
     
         11 . An electronic apparatus, comprising:
 a solid-state image sensor that includes:
 a photoelectric conversion module that includes:
 an upper electrode; 
 a lower electrode; 
 a photoelectric conversion unit between the upper electrode and the lower electrode, wherein
 the photoelectric conversion unit is configured to execute photoelectric conversion on light in a first wavelength range of incident light incident on the solid-state image sensor; and 
 
 a spectral correction unit between the photoelectric conversion unit and the lower electrode, wherein
 the spectral correction unit is configured to at least one of: 
  extract a carrier from the photoelectric conversion unit, or 
  block carrier injection from the lower electrode to the photoelectric conversion unit, and 
 the spectral correction unit has a light absorption peak in a second wavelength range.