Method of making a packaged acoustic wave devices with multi-layer piezoelectric substrate

Abstract

Aspects of this disclosure relate to a method of manufacturing a packaged acoustic wave component with two acoustic wave devices interconnected by a thermally conductive frame. The method includes providing a first acoustic wave device having a multi-layer piezoelectric substrate structure with a first piezoelectric layer disposed over a first support layer and an interdigital transducer electrode. The method further includes stacking the first acoustic wave device relative to a second acoustic wave device such that a thermally conductive frame extends between the first acoustic wave device and the second acoustic wave device. The thermally conductive frame provides a thermal path for heat dissipation from the first acoustic wave device to the second acoustic wave device.

What is claimed is: 
     
         1 . A method of manufacturing a packaged acoustic wave component, the method comprising:
 providing a first acoustic wave device including a multi-layer piezoelectric substrate structure including a first piezoelectric layer disposed over a first support layer and an interdigital transducer electrode; and   stacking the first acoustic wave device relative to a second acoustic wave device such that a thermally conductive frame extends between the first acoustic wave device and the second acoustic wave device, the thermally conductive frame providing a thermal path for heat dissipation from the first acoustic wave device to the second acoustic wave device.   
     
     
         2 . The method of  claim 1  wherein the thermally conductive frame contacts the first support layer. 
     
     
         3 . The method of  claim 1  further comprising a first functional layer interposed between the first support layer and the first piezoelectric layer. 
     
     
         4 . The method of  claim 1  wherein the second acoustic wave device includes a second multi-layer piezoelectric substrate including a second piezoelectric layer disposed over a second support layer. 
     
     
         5 . The method of  claim 4  further comprising a second functional layer interposed between the second support layer and the second piezoelectric layer. 
     
     
         6 . The method of  claim 1  wherein the first support layer is made of a material chosen from a group consisting of silicon, aluminum nitride, sapphire and quartz. 
     
     
         7 . The method of  claim 1  wherein the first support layer has a larger thickness than the first piezoelectric layer. 
     
     
         8 . The method of  claim 4  wherein the first and second support layers have the same material. 
     
     
         9 . The method of  claim 1  wherein the thermally conductive frame supports the first acoustic wave device on the second acoustic wave device and seals a cavity between the first and second acoustic wave devices. 
     
     
         10 . The method of  claim 1  wherein the thermally conductive frame is made of metal. 
     
     
         11 . The method of  claim 1  wherein second acoustic wave device includes one or more vias and heat generated by the second acoustic wave device and received from the first acoustic wave device is removed by way of the one or more vias. 
     
     
         12 . The method of  claim 1  wherein a temperature of the first acoustic wave device increases to no more than approximately 30 degrees Celsius during operation of the second acoustic wave device. 
     
     
         13 . The method of  claim 1  further comprising etching the first piezoelectric layer from over at least a portion of the first second support layer. 
     
     
         14 . A method of dissipating heat for packaged acoustic wave component, the method comprising:
 generating an acoustic wave using a first acoustic wave device including a multi-layer piezoelectric substrate structure including a first piezoelectric layer disposed over a first support layer and a first interdigital transducer electrode; and   dissipating heat associated with the first acoustic wave device using a thermal path that includes a thermally conductive frame extending from the first acoustic wave device to a second acoustic wave device, the first acoustic wave device being stacked relative to the second acoustic wave device, and the second acoustic wave device having a second interdigital transducer electrode that faces and is spaced apart from the first interdigital transducer electrode.   
     
     
         15 . The method of  claim 14  wherein the thermally conductive frame contacts the first support layer. 
     
     
         16 . The method of  claim 14  further comprising a first functional layer interposed between the first support layer and the first piezoelectric layer. 
     
     
         17 . The method of  claim 14  wherein the second acoustic wave device includes a second multi-layer piezoelectric substrate including a second piezoelectric layer disposed over a second support layer. 
     
     
         18 . The method of  claim 17  further comprising a second functional layer interposed between the second support layer and the second piezoelectric layer. 
     
     
         19 . The method of  claim 14  wherein the first support layer is made of a material chosen from a group consisting of silicon, aluminum nitride, sapphire and quartz. 
     
     
         20 . The method of  claim 14  wherein the first support layer has a larger thickness than the first piezoelectric layer. 
     
     
         21 . The method of  claim 17  wherein the first and second support layers have the same material. 
     
     
         22 . The method of  claim 14  wherein the thermally conductive frame supports the first acoustic wave device on the second acoustic wave device and seals a cavity between the first and second acoustic wave devices. 
     
     
         23 . The method of  claim 14  wherein the thermally conductive frame is made of metal. 
     
     
         24 . The method of  claim 14  wherein second acoustic wave device includes one or more vias and heat generated by the second acoustic wave device and received from the first acoustic wave device is removed by way of the one or more vias. 
     
     
         25 . The method of  claim 14  wherein a temperature of the first acoustic wave device increases to no more than approximately 30 degrees Celsius during operation of the second acoustic wave device.