Light emitting diodes having a plurality of light emitting cells

Abstract

A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

We claim: 
     
         1 . A light emitting device, comprising:
 a support member;   light emitting elements disposed on the support member, and   wherein each light emitting element includes:
 a first semiconductor layer having a first conductivity type; 
 a second semiconductor layer having a second conductivity type different from the first conductivity type; 
 an active layer disposed between the first semiconductor layer and the second semiconductor layer; 
 an ohmic layer disposed on the second semiconductor layer and in electrically contact with the second semiconductor layer; 
 a first electrode electrically connected to the first semiconductor layer; 
 a second electrode electrically connected to the second semiconductor layer; 
 an upper insulation layer covering the first electrode and the second electrode and having a first opening and a second opening exposing the first electrode and the second electrode, respectively; and 
 a first pad and a second pad that are respectively electrically connected to the first electrode and the second electrode exposed through the first opening and the second opening of the upper insulation layer, and 
 wherein the light emitting device further includes a first optical element disposed on the support member and surrounding a light emitting element and a second optical element disposed on sides of a light emitting element and the first optical element. 
   
     
     
         2 . The light emitting device of  claim 1 , wherein the second optical element is disposed between two light emitting elements that are adjacent each other and having a shape extending along a surface of the support member. 
     
     
         3 . The light emitting device of  claim 1 , wherein the first optical element has a convex segment. 
     
     
         4 . The light emitting device of  claim 1 , wherein the light emitting elements are arranged to be apart from one another by a predetermined distance. 
     
     
         5 . The light emitting device of  claim 1 , wherein the first optical element and the second optical element have top surfaces that are apart from the support member by different distances from each other. 
     
     
         6 . The light emitting device of  claim 1 , wherein the upper insulation layer includes a distributed Bragg reflector including SiO 2  and TiO 2  that are repeatedly stacked on above another. 
     
     
         7 . The light emitting device of  claim 1 , further comprising a lower insulation layer disposed between the second semiconductor layer and the upper insulation layer and having a third opening exposing the second semiconductor layer, and the third opening not overlapping with the second opening of the upper insulation layer. 
     
     
         8 . The light emitting device of  claim 7 , wherein a portion of the lower insulation layer that contacts with the ohmic layer has a thickness different from another portion of the lower insulation layer. 
     
     
         9 . The light emitting device of  claim 1 , wherein an edge of the lower insulation layer extends in a direction away from an edge of the first semiconductor layer such that the edge of the lower insulation layer is disposed on a side of the first semiconductor layer. 
     
     
         10 . The light emitting device of  claim 1 , wherein the second pad has an inclined surface. 
     
     
         11 . A light emitting device, comprising:
 a support member;   a light emitting element including a first semiconductor layer disposed on the support member, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer;   a first pad electrode electrically connected to the first semiconductor layer;   a second pad electrode electrically connected to the second semiconductor layer;   an upper insulation layer covering the first pad electrode and the second pad electrode and having a plurality of openings exposing upper surfaces of the first pad electrode and the second pad electrode;   a first bump pad and a second bump pad that are electrically connected to the first pad electrode and the second pad electrode exposed through the openings of the upper insulation layer;   a first light guide region disposed on the support member and surrounding the light emitting element; and   a second light guide region disposed on the support member to be on a side of the first light guide region and having a height different from a height of the first light guide region.   
     
     
         12 . The light emitting device of  claim 11 , wherein a side view profile of the first light guide region has a curved shape. 
     
     
         13 . The light emitting device of  claim 11 , wherein the upper insulation layer includes a distributed Bragg reflector including SiO 2  and TiO 2  that are repeatedly stacked on above another. 
     
     
         14 . The light emitting device of  claim 11 , further comprising a lower insulation layer disposed between the second semiconductor layer and the upper insulation layer and having an opening not overlapping with at least one of the openings of the upper insulation layer. 
     
     
         15 . The light emitting device of  claim 1 , wherein an edge of the lower insulation layer extends in a direction away from an edge of the first semiconductor layer such that the edge of the lower insulation layer is disposed on a side of the first semiconductor layer. 
     
     
         16 . A light emitting device comprising:
 a support member;   a plurality of light emitting elements disposed on the support member and apart from one another; and   first optical elements disposed to surround the light emitting elements, each optical element having a top surface with a convex curvature, and   
       wherein each light emitting element includes:
 a first semiconductor layer having a first conductivity type; 
 an active layer disposed over the first semiconductor layer; 
 a second semiconductor layer disposed over the active layer and having a second conductivity type different from the first conductivity type; 
 an ohmic layer disposed on the second semiconductor layer and in electrically contact with the second semiconductor layer; 
 a first pad electrode electrically connected to the first conductivity type semiconductor layer; 
 a second pad electrode electrically connected to the second conductivity type semiconductor layer; 
 an upper insulation layer covering the first pad electrode and the second pad electrode, the upper insulation layer having a plurality of openings exposing upper surfaces of the first pad electrode and the second pad electrode, respectively; 
 a first pad and a second pad that are electrically connected to the first pad electrode and the second pad electrode exposed through the openings of the upper insulation layer. 
 
     
     
         17 . The light emitting device of  claim 16 , further comprising: an additional optical element disposed between two light emitting elements and having a shape extending along a surface of the support member. 
     
     
         18 . The light emitting device of  claim 16 , wherein the first optical element has a height further away from the support member as compared to the additional optical element. 
     
     
         19 . The light emitting device of  claim 16 , further comprising a lower insulation layer disposed between the second semiconductor layer and the upper insulation layer, wherein a portion of the lower insulation layer that contacts with the ohmic layer has a thickness different from another portion of the lower insulation layer. 
     
     
         20 . The light emitting device of  claim 16 , wherein an edge of the lower insulation layer extends in a direction away from an edge of the first semiconductor layer such that the edge of the lower insulation layer is disposed on a side of the first semiconductor layer.