Semiconductor device package

Abstract

A semiconductor device package includes a lead frame, a semiconductor device including a first face connected to the lead frame, a second face that faces the first face, a gate pad, a drain pad, and a source pad, the gate pad exposed on the second face of the semiconductor, the drain pad exposed on the second face of the second face, and the source pad exposed on the second face, a gate clip connected to the gate pad, a drain clip connected to the drain pad, a source clip connected to the source pad, the source clip connected to the lead frame, and a molding that seals the lead frame, the semiconductor device, the source clip, the drain clip, and the gate clip.

What is claimed is: 
     
         1 . A semiconductor device package comprising:
 a lead frame;   a semiconductor device including a first face connected to the lead frame, a second face that faces the first face, a gate pad, a drain pad, and a source pad, the gate pad exposed on the second face of the semiconductor, the drain pad exposed on the second face of the second face, and the source pad exposed on the second face;   a gate clip connected to the gate pad;   a drain clip connected to the drain pad;   a source clip connected to the source pad, the source clip connected to the lead frame; and   a molding configured to seal the lead frame, the semiconductor device, the source clip, the drain clip, and the gate clip.   
     
     
         2 . The semiconductor device package of  claim 1 , wherein
 the source clip includes a bonding portion connected to the source pad, and   the bonding portion covers 30% or more of an area of the first face of the semiconductor device.   
     
     
         3 . The semiconductor device package of  claim 1 , wherein the source clip is integral with the lead frame. 
     
     
         4 . The semiconductor device package of  claim 3 , wherein the source clip comprises:
 an extension portion bent from the lead frame, the extension portion bent toward the second face; and   a bonding portion extending above the source pad, the bonding portion extending from the extension portion, the bonding portion connected to the source pad.   
     
     
         5 . The semiconductor device package of  claim 4 , wherein the bonding portion has a recession portion recessed toward the extension portion. 
     
     
         6 . The semiconductor device package of  claim 5 , wherein
 the drain pad comprises an extension pad extending into the recession portion, and   the drain clip comprises an extension clip connected to the extension pad.   
     
     
         7 . The semiconductor device package of  claim 4 , wherein
 the gate clip comprises a first bonding portion connected to the gate pad and a first extension portion extending parallel to the lead frame, the extension portion extending from the first bonding portion,   the drain clip comprises a second bonding portion connected to the drain pad and a second extension portion extending parallel to the lead frame, the extension portion extending from the second bonding portion,   an outer surface of a portion of the lead frame connected to the first face is exposed to the outside of the molding,   faces of the first extension portion that face the first face of the semiconductor device are exposed to the outside of the molding, and   faces of the second extension portion that face the first face of the semiconductor device are exposed to the outside of the molding.   
     
     
         8 . The semiconductor device package of  claim 7 , wherein the first extension portion and the second extension portion are entirely exposed to the outside of the molding. 
     
     
         9 . The semiconductor device package of  claim 7 , wherein
 faces of the bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding,   faces of the first bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding, and   faces of the second bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding.   
     
     
         10 . The semiconductor device package of  claim 9 , further comprising:
 a heat dissipation body contacting the faces of the bonding portion that face the second face of the semiconductor device, contacting faces of the first bonding portion that face the second face of the semiconductor device, and contacting faces of the second bonding portion that face the second face of the semiconductor device.   
     
     
         11 . The semiconductor device package of  claim 7 , wherein
 the bonding portion is buried in the molding, and   the bonding portion has a heat dissipation fin exposed to outside of the molding.   
     
     
         12 . The semiconductor device package of  claim 4 , wherein
 the gate clip comprises a first bonding portion connected to the gate pad,   the drain clip comprises a second bonding portion that is connected to the drain pad,   an outer surface of a portion of the lead frame connected to the first face is exposed to the outside of the molding,   faces of the bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding,   faces of the first bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding, and   faces of the second bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding.   
     
     
         13 . The semiconductor device package of  claim 1 , wherein the source clip comprises a bonding portion connected to the source pad, and an extension portion extending from the bonding portion to an upper surface of the lead frame, the extension portion connected to the upper surface of the lead frame. 
     
     
         14 . The semiconductor device package of  claim 13 , wherein
 the gate clip comprises a first bonding portion connected to the gate pad and a first extension portion extending parallel to the lead frame, the first extension portion extending from the first bonding portion,   the drain clip comprises a second bonding portion connected to the drain pad and a second extension portion extending parallel to the lead frame, the second extension portion extending from the second bonding portion,   an outer surface of a portion of the lead frame connected to the first face of the semiconductor device is exposed to the outside of the molding,   faces of the first extension portion that face the first face of the semiconductor device are exposed to the outside of the molding, and   faces of the second extension portion that face the first face of the semiconductor device are exposed to the outside of the molding.   
     
     
         15 . The semiconductor device package of  claim 14 , wherein the first extension portion and the second extension portion are entirely exposed to the outside of the molding. 
     
     
         16 . The semiconductor device package of  claim 14 , wherein
 faces of the bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding,   faces of the first bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding, and   faces of the second bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding.   
     
     
         17 . The semiconductor device package of  claim 16 , further comprising a heat dissipation body contacting the faces of the bonding portion that face the second face of the semiconductor device, the faces of first bonding portion that face the second face of the semiconductor device, and the faces of the second bonding portion that face the second face of the semiconductor device. 
     
     
         18 . The semiconductor device package of  claim 13 , wherein
 the gate clip comprises a first bonding portion connected to the gate pad,   the drain clip comprises a second bonding portion connected to the drain pad,   an outer surface of a portion of the lead frame connected to the first face of the semiconductor device is exposed to the outside of the molding,   faces of the bonding portion that face the second face of the semiconductor device is exposed to the outside of the molding,   faces of the first bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding, and   faces of the second bonding portion that face the second face of the semiconductor device are exposed to the outside of the molding.   
     
     
         19 . A semiconductor device package comprising:
 a lead frame;   a semiconductor device comprising a first face connected to the lead frame, a second face that faces the first face, and a plurality of electrode pads exposed on the second face;   a plurality of clips connected to the plurality of electrode pads; and   a molding configured to seal the lead frame, the semiconductor device, and the plurality of clips,   wherein an outer surface of a portion of the lead frame connected to the first face of the semiconductor device is exposed to the outside of the molding, and   at least one of the plurality of clips connects to the lead frame.   
     
     
         20 . The semiconductor device package of  claim 19 , wherein the semiconductor device includes a horizontal channel-type semiconductor power device.