US2022148902A1PendingUtilityA1
Cleaning method and substrate processing apparatus
Est. expiryMay 14, 2038(~11.8 yrs left)· nominal 20-yr term from priority
Inventors:Takehiro Tanikawa
H10P 72/7611H10P 72/0402H10P 72/72H10P 72/0434H10P 72/0406B08B 5/02H01J 37/32642H01J 37/32862B08B 6/00H01L 21/68735H01L 21/6831H01L 21/67017H10P 72/7612H10P 72/7606H10P 70/12H01J 37/32091H01J 37/32706
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Claims
Abstract
A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.
Claims
exact text as granted — not AI-modified1 - 16 (canceled)
17 . A substrate processing apparatus comprising:
a plasma processing chamber; an electrostatic chuck disposed in the chamber; a ring structure including an inner edge ring disposed near a substrate on the electrostatic chuck, a central edge ring disposed so as to surround the inner edge ring, and an outer edge ring disposed so as to surround the central edge ring; a DC power supply configured to apply a direct current voltage to the electrostatic chuck; a moving mechanism configured to vertically move the central edge ring; and a controller configured to control the DC power supply and the moving mechanism to vertically move the central edge ring while applying the direct current voltage to the electrostatic chuck.
18 . The substrate processing apparatus of claim 17 , wherein the controller is further configured to control supplying a cleaning gas to a position below the central edge ring.
19 . The substrate processing apparatus of claim 18 , wherein the cleaning gas includes an inert gas.
20 . The substrate processing apparatus of claim 17 , wherein the controller is further configured to control the DC power supply to alternately apply a positive direct current voltage and a negative direct current voltage to the electrostatic chuck.
21 . The substrate processing apparatus of claim 17 , wherein the controller is further configured to control a polarity of the direct current voltage depending on types of deposits adhered to the central edge ring.
22 . The substrate processing apparatus of claim 17 , wherein at least one of the inner edge ring and the outer edge ring has an electrode, and
wherein the controller is further configured to control applying a direct current voltage to the electrode.
23 . The substrate processing apparatus of claim 17 , further comprising:
a shower head provided at a position where the substrate faces, wherein at least one of the inner edge ring and the outer edge ring has an electrode, and wherein the controller is further configured to control applying a direct current voltage to at least one of the electrode and the shower head.
24 . The substrate processing apparatus of claim 17 , wherein the inner edge ring and the outer edge ring are vertically movable, and
wherein the controller is further configured to control the moving mechanism to vertically move at least one of the inner edge ring and the outer edge ring.
25 . The substrate processing apparatus of claim 17 , wherein the controller is further configured to control, after applying the direct current voltage, determining whether or not a predetermined time has elapsed since the direct current voltage is applied to the electrostatic chuck.
26 . The substrate processing apparatus of claim 17 , wherein a vertical displacement of the central edge ring is determined based on a consumption amount of the central edge ring.
27 . The substrate processing apparatus of claim 17 , wherein the controller is configured to remove particles in a space between the central edge ring and the inner edge ring by vertically moving the central edge ring while applying the direct current voltage to the electrostatic chuck.
28 . The substrate processing apparatus of claim 27 , wherein the controller is configured to change the space and a direction or an intensity of an electric field in the space by vertically moving the central edge ring while applying the direct current voltage to the electrostatic chuck.
29 . The substrate processing apparatus of claim 28 , wherein the controller is configured to constantly change the direction or the intensity of the electric field in the space by vertically moving the central edge ring while applying the direct current voltage to the electrostatic chuck.Join the waitlist — get patent alerts
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