Semiconductor device

Abstract

A semiconductor device according to embodiments includes a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and, a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component, wherein, when a threshold voltage of the normally-off transistor is denoted by Vth, a maximum rated gate voltage of the normally-off transistor is denoted by Vg_max, a voltage of the fourth end portion is denoted by Vg_on, the first capacitance component is denoted by Ca, and the second capacitance component is denoted by Cb, Vth<(Cb/(Ca+Cb))Vg_on<Vg_max.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a normally-off transistor having a first electrode, a second electrode, and a first control electrode;   a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode;   a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and   a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the first element is a first Zener diode having a first anode and a first cathode, and the first element including a first junction capacitance, and   wherein the first end portion is the first cathode, the second end portion is the first anode, and the first capacitance component is the first junction capacitance.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein the first element is a first capacitor having a fifth end portion and a sixth end portion, and the first element includes a first capacitance, and   wherein the first end portion is the fifth end portion, the second end portion is the sixth end portion, and the first capacitance component is the first capacitance.   
     
     
         4 . The semiconductor device according to  claim 3 , further comprising a first Zener diode having a first cathode electrically connected to the first end portion and a first anode electrically connected to the second end portion, and the first Zener diode being connected in parallel with the first capacitor. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein, when the first breakdown voltage of the first Zener diode is denoted by V z (D 1 ) , and a maximum rated gate voltage of the normally-off transistor is denoted by V g_max ,
 V z (D 1 )<V g_max .   
     
     
         6 . The semiconductor device according to  claim 1 ,
 wherein the second element is a second Zener diode having a second anode and a second cathode, and the second element including a second junction capacitance, and   wherein the third end portion is the second anode, the fourth end portion is the second cathode, and the second capacitance component is the second junction capacitance.   
     
     
         7 . The semiconductor device according to  claim 1 ,
 wherein the second element is a second capacitor having a seventh end portion and an eighth end portion, and the second element includes a second capacitance, and   wherein the third end portion is the seventh end portion, the fourth end portion is the eighth end portion, and the second capacitance component is the second capacitance.   
     
     
         8 . The semiconductor device according to  claim 7 , further comprising a second Zener diode having a second anode electrically connected to the third end portion and a second cathode electrically connected to the fourth end portion, and the second Zener diode being connected in parallel with the second capacitor. 
     
     
         9 . The semiconductor device according to  claim 6 , wherein, when the second breakdown voltage of the second Zener diode is denoted by V z (D 2 ), a voltage of the fourth end portion is denoted by and a threshold voltage of the normally-off transistor is denoted by V th ,
   V z (D 2 )<V g_on −V th .
   
     
     
         10 . The semiconductor device according to  claim 1 , further comprising a first diode having a third anode electrically connected to the second control electrode and a third cathode electrically connected to the third electrode. 
     
     
         11 . The semiconductor device according to  claim 1 , further comprising:
 a second diode having a fourth anode electrically connected to the second control electrode and a fourth cathode; and   a third capacitor having a ninth end portion electrically connected to the fourth anode and a tenth end portion electrically connected to the fourth cathode, and the third capacitor being connected in parallel with the second diode.   
     
     
         12 . The semiconductor device according to  claim 1 , further comprising:
 a third diode having a fifth cathode electrically connected to the fourth end portion and a fifth anode; and   a resistor having an eleventh end portion electrically connected to the fifth cathode and a twelfth end portion electrically connected to the fifth anode, and the resistor being connected in parallel with the third diode.   
     
     
         13 . The semiconductor device according to  claim 1 , further comprising a gate drive circuit electrically connected to the first control electrode and the second control electrode. 
     
     
         14 . The semiconductor device according to  claim 1 , wherein, when a threshold voltage of the normally-off transistor is denoted by V th , a maximum rated gate voltage of the normally-off transistor is denoted by V g_max , a voltage of the fourth end portion is denoted by V g_on , the first capacitance component is denoted by C a , and the second capacitance component is denoted by C b ,
   V th <(C b /(C a +C v ))V g_on <V g_max .