Semiconductor laser diode

Abstract

A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.

1 . A semiconductor laser diode comprising:
 a semiconductor body having an emitter region; and   a first connection element that electrically contacts the semiconductor body in the emitter region,   
       wherein
 the semiconductor body is in contact with the first connection element in the emitter region, 
 at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, 
 the semiconductor body comprises a connection region that directly adjoins the first connection element at the contact area, and 
 the connection region is a highly p-doped layer. 
 
     
     
         2 . The semiconductor laser diode according to  claim 1 , wherein, the connection region is not completely pierced at any point. 
     
     
         3 . The semiconductor laser diode according to  claim 1 , wherein the dopant concentration of the highly p-doped layer is at least 5*10 18 /cm 3 . 
     
     
         4 . The semiconductor laser diode according to  claim 1 , wherein the semiconductor body is thicker in the connection region than in neighboring regions. 
     
     
         5 . The semiconductor laser diode according to  claim 1 , wherein
 the semiconductor body comprises a subregion arranged laterally adjacent to the emitter region,   at least in places in the subregion, the semiconductor body has a further structuring comprising further structures, and   the further structuring is configured to weaken secondary modes.   
     
     
         6 . The semiconductor laser diode according to  claim 5 , structures of the structuring have a mean height that is smaller than a mean height of the further structures of the further structuring. 
     
     
         7 . The semiconductor laser diode according to  claim 5 , wherein the connection region extends in the subregion. 
     
     
         8 . The semiconductor laser diode according to  claim 7 , wherein the further structures of the further structuring completely pierce the connection region. 
     
     
         9 . The semiconductor laser diode according to  claim 1 ,
 wherein the structuring has a density of structures, and   the density of the structures increases towards a radiation exit surface.   
     
     
         10 . The semiconductor laser diode according to  claim 1 , wherein, at least in places, the contact area having the structuring located between the semiconductor body and the first connection element is at least 1.5 times as large as a contact area free of the structuring and located between the semiconductor body and the connection element. 
     
     
         11 . The semiconductor laser diode according to  claim 1 , wherein the connection element comprises a metallic layer that completely covers the semiconductor body in the emitter region. 
     
     
         12 . The semiconductor laser diode according to  claim 1 , wherein, at least in places, the structuring comprises at least one structure selected from the group consisting of truncated cone, inverse truncated cone, truncated pyramid, inverse truncated pyramid, cone, inverse cone, pyramid, inverse pyramid, spherical shell and inverse spherical shell. 
     
     
         13 . The semiconductor laser diode according to  claim 1 , wherein a maximum lateral extension of each structure is at least 400 nm. 
     
     
         14 . The semiconductor laser diode according to  claim 5 , wherein an electrically insulating insulation element is arranged between the subregion and the first connection element and in the subregion completely covers the semiconductor body on a side facing the first connection element.