Semiconductor device and method of fabricating the same

Abstract

A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.

1 - 8 . (canceled) 
     
     
         9 . A semiconductor device, comprising:
 a substrate;   an electrode structure including electrodes stacked on the substrate; and   an semiconductor pattern penetrating the electrode structure,   wherein the semiconductor pattern includes a gap-filling portion and a sidewall portion,   the sidewall portion extending from the gap-filling portion in a direction away from the substrate,   a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate,   a bottom surface of the gap-filling portion is disposed below a topmost surface of the substrate; and   a thickness of the sidewall portion is less than a thickness of the gap-filling portion.   
     
     
         10 . The semiconductor device of  claim 9 , wherein the substrate has a concave top surface, and
 wherein the gap-filling portion fills a region enclosed by the concave top surface.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the bottom surface of the gap-filling portion has a rounded shape that is convexly deformed toward the substrate. 
     
     
         12 . The semiconductor device of  claim 9 , wherein the top surface of the gap-filling portion is disposed below a lowermost one of the electrodes. 
     
     
         13 . The semiconductor device of  claim 9 , wherein the gap-filling portion has a flat bottom surface.