Copper plating structure and package structure including the same

Abstract

A copper plating structure and a package structure including the same are provided, and the copper plating structure includes at least one first copper layer and at least one second copper layer. The first copper layer includes a (111) crystal plane, wherein a proportion of the (111) crystal plane in each of the first copper layers is 36% to 100%. The second copper layer is located on the first copper layer and includes a non-(111) crystal plane or includes a (111) crystal plane and a non-(111) crystal plane, wherein a proportion of the (111) crystal plane in each of the second copper layers is 0% to 57%.

What is claimed is: 
     
         1 . A copper plating structure, comprising:
 at least one first copper layer comprising a (111) crystal plane; and   at least one second copper layer comprising a non-(111) crystal plane or comprising a (111) crystal plane and a non-(111) crystal plane, wherein the at least one second copper layer is located on the first copper layer,   wherein a proportion of the (111) crystal plane in each of the first copper layers is 36% to 100%, and a proportion of the (111) crystal plane in each of the second copper layers is 0% to 57%.   
     
     
         2 . The copper plating structure of  claim 1 , wherein a difference between the proportion of the (111) crystal plane in the first copper layer and the proportion of the (111) crystal plane in the second copper layer is 5% or more. 
     
     
         3 . The copper plating structure of  claim 1 , wherein a thickness of each of the first copper layers is 1 μm to 276 μm. 
     
     
         4 . The copper plating structure of  claim 1 , wherein a thickness of each of the second copper layers is 1 μm to 276 μm. 
     
     
         5 . The copper plating structure of  claim 1 , wherein a total thickness of the copper plating structure is 2 μm to 1 mm. 
     
     
         6 . The copper plating structure of  claim 5 , wherein a number of the first copper layer is a plurality, a number of the second copper layer is a plurality, and the plurality of first copper layers and the plurality of second copper layers are alternately stacked. 
     
     
         7 . The copper plating structure of  claim 1 , wherein the non-(111) crystal plane comprises a (200) crystal plane, a (220) crystal plane, or a (311) crystal plane. 
     
     
         8 . A package circuit structure, comprising the copper plating structure of  claim 1 , formed at at least a side of a substrate. 
     
     
         9 . A package heat dissipation structure, comprising the copper plating structure of  claim 1 , formed at at least a side of a substrate. 
     
     
         10 . A package circuit structure, comprising the copper plating structure of  claim 2 , formed at at least a side of a substrate. 
     
     
         11 . A package heat dissipation structure, comprising the copper plating structure of  claim 2 , formed at at least a side of a substrate. 
     
     
         12 . A package circuit structure, comprising the copper plating structure of  claim 3 , formed at at least a side of a substrate. 
     
     
         13 . A package heat dissipation structure, comprising the copper plating structure of  claim 3 , formed at at least a side of a substrate. 
     
     
         14 . A package circuit structure, comprising the copper plating structure of  claim 4 , formed at at least a side of a substrate. 
     
     
         15 . A package heat dissipation structure, comprising the copper plating structure of  claim 4 , formed at at least a side of a substrate. 
     
     
         16 . A package circuit structure, comprising the copper plating structure of  claim 5 , formed at at least a side of a substrate. 
     
     
         17 . A package heat dissipation structure, comprising the copper plating structure of  claim 5 , formed at at least a side of a substrate. 
     
     
         18 . A package circuit structure, comprising the copper plating structure of  claim 6 , formed at at least a side of a substrate. 
     
     
         19 . A package heat dissipation structure, comprising the copper plating structure of  claim 6 , formed at at least a side of a substrate. 
     
     
         20 . A package circuit structure, comprising the copper plating structure of  claim 7 , formed at at least a side of a substrate.