Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic apparatus

Abstract

[Problem] Provided are: a solid-state imaging element capable of actualizing a phase difference detection pixel that enables a finer pattern of pixels and also enables improvement in quality of a captured image in a stacked structure including a plurality of photodiodes; a method for manufacturing the solid-state imaging element; and an electronic apparatus.[Solution] Provided is a solid-state imaging element including a plurality of pixels including at least two phase difference detection pixels for focus detection. In the solid-state imaging element, each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.

1 . A solid-state imaging element, comprising:
 a plurality of pixels including at least two phase difference detection pixels for focus detection, wherein
 each pixel of the plurality of pixels has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, 
 each phase difference detection pixel, of the at least two phase difference detection pixels, includes a color filter that partially covers an upper face of one of the plurality of photoelectric conversion elements and absorbs a light beam with a specific wavelength, 
 each stacked structure includes a first photoelectric conversion element, a second photoelectric conversion element stacked below the first photoelectric conversion element, and a third photoelectric conversion element stacked below the second photoelectric conversion element, and 
 in each stacked structure, the color filter partially covers an upper face of the second photoelectric conversion element. 
   
     
     
         2 . The solid-state imaging element according to  claim 1 , wherein the color filter has a rectangular shape or a triangular shape when the stacked structure is seen from above. 
     
     
         3 . The solid-state imaging element according to  claim 1 , wherein
 each phase difference detection pixel, of the at least two phase difference detection pixels, further includes a lens part disposed above the stacked structure, and   a position of a center point of the color filter, of each phase difference detection pixel, is different from a position of an optical axis of the corresponding lens part.   
     
     
         4 . The solid-state imaging element according to  claim 1 , wherein color filters of the at least two phase difference detection pixels absorb light beams different in wavelength from one another. 
     
     
         5 . The solid-state imaging element according to  claim 1 , wherein at least one of the plurality of photoelectric conversion elements includes an organic photoelectric conversion film. 
     
     
         6 . A method for manufacturing a solid-state imaging element, comprising:
 stacking a plurality of photoelectric conversion elements that absorb light beams different in wavelength from one another to generate electrical charges,
 wherein the stacked plurality of photoelectric conversion elements includes a first photoelectric conversion element, a second photoelectric conversion element stacked below the first photoelectric conversion element, and a third photoelectric conversion element stacked below the second photoelectric conversion element; and 
   forming, in each stacked structure, a color filter that partially covers an upper face of the second photoelectric conversion element and absorbs a light beam with a specific wavelength.   
     
     
         7 . An electronic apparatus, comprising:
 a solid-state imaging element including a plurality of pixels including at least two phase difference detection pixels for focus detection, wherein
 each pixel of the plurality of pixels has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, 
 each phase difference detection pixel, of the at least two phase difference detection pixels, includes a color filter that partially covers an upper face of one of the plurality of photoelectric conversion elements and absorbs a light beam with a specific wavelength, 
 each stacked structure includes a first photoelectric conversion element, a second photoelectric conversion element stacked below the first photoelectric conversion element, and a third photoelectric conversion element stacked below the second photoelectric conversion element, and 
 in each stacked structure, the color filter partially covers an upper face of the second photoelectric conversion element.