US2022122562A1PendingUtilityA1

Semiconductor Device, and Display Device and Electronic Device Utilizing the Same

Assignee: SEMICONDUCTOR ENERGY LABPriority: Dec 25, 2002Filed: Dec 28, 2021Published: Apr 21, 2022
Est. expiryDec 25, 2022(expired)· nominal 20-yr term from priority
H10D 86/481H10D 86/441H10D 86/60G09G 2310/0286G09G 2310/0291G09G 3/20G09G 5/003G09G 2330/021G09G 2310/0289G09G 3/36G09G 2310/0275H03K 19/018507G09G 2310/0267H01L 27/1255H01L 27/124
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Claims

Abstract

A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising a first transistor, a second transistor, a third transistor, a first input terminal, and a second input terminal, said semiconductor device characterized in that:
 a source terminal of the first transistor is connected to a drain terminal of the second transistor,   a drain terminal of the third transistor is connected to a gate terminal of the first transistor,   the first input terminal is connected to a gate terminal of the third transistor and a gate terminal of the second transistor, and   the second input terminal is connected to the gate terminal of the first transistor through a rectifying element.

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