US2022119984A1PendingUtilityA1

Group iii nitride substrate and method for producing group iii nitride crystal

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Assignee: PANASONIC IP MAN CO LTDPriority: Mar 25, 2016Filed: Dec 28, 2021Published: Apr 21, 2022
Est. expiryMar 25, 2036(~9.7 yrs left)· nominal 20-yr term from priority
Inventors:Yoshio Okayama
H10H 20/0137H10H 20/8215C30B 25/183C30B 29/22C30B 29/406C30B 19/12C30B 19/02C30B 23/025C30B 25/18
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Claims

Abstract

A method for producing a Group III nitride crystal including preparing an RAMgO 4 substrate containing a single crystal represented by the general formula RAMgO 4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, and A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al); and growing a Group III nitride crystal containing Mg on the RAMgO 4 substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for producing a Group III nitride crystal, comprising:
 preparing an RAMgO 4  substrate containing a single crystal represented by the general formula RAMgO 4  (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, and A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al); and   growing a Group III nitride crystal containing Mg on the RAMgO 4  substrate.   
     
     
         2 . The method for producing a Group III nitride crystal according to  claim 1 , wherein the method further comprises:
 forming a buffer layer on the RAMgO 4  substrate at a first temperature, and   the growing of the Group III nitride crystal further includes growing a Group III nitride on the buffer layer at a second temperature that is higher than the first temperature.   
     
     
         3 . The method for producing a Group III nitride crystal according to  claim 1 , wherein the growing a Group III nitride crystal further includes growing a Group III nitride crystal with a molten alkali metal containing nitrogen. 
     
     
         4 . The method for producing a Group III nitride crystal according to  claim 1 , wherein the growing a Group III nitride crystal further includes growing a Group III nitride crystal with a gas containing a nitrogen element and a gas containing a Group III compound.

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