Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process

Abstract

Systems for depositing a transition metal chalcogenide film on a substrate by cyclical deposition process are disclosed. The methods may include, contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor, or a zirconium precursor, and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a transition metal chalcogenide film deposited by the methods of the disclosure are also provided.

What is claimed is: 
     
         1 . A method for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process, the method comprising:
 contacting the substrate with at least one transition metal containing vapor phase reactant comprising at least one of a hafnium precursor and a zirconium precursor; and   contacting the substrate with at least one chalcogen containing vapor phase reactant.   
     
     
         2 . The method of  claim 1 , wherein the cyclical deposition process comprises atomic layer deposition. 
     
     
         3 . The method of  claim 1 , wherein the cyclical deposition process comprises cyclical chemical vapor deposition. 
     
     
         4 . The method of  claim 1 , wherein at least one of the hafnium precursor and the zirconium precursor comprises at least one of a halide precursor and a metalorganic precursor. 
     
     
         5 . The method of  claim 4 , wherein the halide precursor comprises at least one of hafnium tetrachloride (HfCl 4 ) and zirconium tetrachloride (ZrCl 4 ). 
     
     
         6 . The method of  claim 4 , wherein the metalorganic precursor comprises at least one of an alkylamide precursor and a cyclopentadienyl-ligand containing precursor. 
     
     
         7 . The method of  claim 6 , wherein the alkylamide precursor comprises at least one of tetrakis(ethylmethylamido)hafnium (Hf(NEtMe) 4 ), and tetrakis(ethylmethylamido)zirconium (Zr(NEtMe) 4 ). 
     
     
         8 . The method of  claim 6 , wherein the cyclopentadienyl-ligand containing precursor comprises at least one of tris(dimethylamido)cyclopentadienylhafnium (HfCp(NMe 2 ) 3 ), bis(methylcyclopentadienyl)methoxymethylhafnium ((MeCp) 2 Hf(CH) 3 (OCH 3 )), tris(dimethylamido)cyclopentadienylzirconium (ZrCp(NMe 2 ) 3 ), and bis(methylcyclopentadienyl)methoxymethylzirconium ((MeCp) 2 Zr(CH) 3 (OCH 3 )). 
     
     
         9 . The method of  claim 1 , wherein the at least one chalcogen containing vapor phase reactant comprises hydrogen sulfide (H 2 S), hydrogen selenide (H 2 Se), dimethyl sulfide ((CH 3 ) 2 S), and dimethyl telluride (CH 3 ) 2 Te. 
     
     
         10 . The method of  claim 1 , further comprising flowing the chalcogen containing vapor phase reactant through a gas purifier prior to entering the reaction chamber to reduce a concentration of at least one of water and oxygen within the chalcogen containing vapor phase reactant. 
     
     
         11 . The method of  claim 10 , wherein the concentration of at least one of water and oxygen within the chalcogen containing vapor phase reactant is reduced to less than 1 part per million. 
     
     
         12 . The method of  claim 1 , further comprising flowing a carrier gas through a vessel containing a source of the transition metal containing vapor phase reactant to transport the transition metal containing vapor phase reactant to the reaction chamber and further comprising flowing the carrier gas through a gas purifier prior to entering the source of the transition metal containing vapor phase reactant to reduce a concentration of at least one of water and oxygen within the carrier gas. 
     
     
         13 . The method of  claim 12 , wherein the concentration of at least one of water and oxygen within the carrier gas is reduced to less than 1 part per million. 
     
     
         14 . The method of  claim 1 , further comprising pre-annealing the reaction chamber prior to film deposition. 
     
     
         15 . The method of  claim 1 , wherein the transition metal chalcogenide film comprises a predominant (001) crystallographic orientation. 
     
     
         16 . The method of  claim 1 , further comprising in-situ depositing a capping layer over the transition metal chalcogenide film. 
     
     
         17 . The method of  claim 16 , wherein in-situ depositing a capping layer over the transition metal chalcogenide film comprises depositing the capping layer utilizing non-oxidative precursors or non-oxygen reactants. 
     
     
         18 . The method of  claim 16 , wherein the capping layer comprises a metal silicate film. 
     
     
         19 . The method of  claim 18 , wherein the metal silicate film comprises an aluminum silicate film (Al x Si y O z ). 
     
     
         20 . A semiconductor device structure comprising a transition metal chalcogenide film deposited by the method of  claim 1 .