US2022112226A1PendingUtilityA1
Trifluoroacetyl iodide compositions useful for making trifluoroiodomethane
Est. expiryOct 14, 2040(~14.2 yrs left)· nominal 20-yr term from priority
C07C 17/363C07F 13/00C07C 19/16C07C 69/62
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Claims
Abstract
The present disclosure provides a composition including trifluoroacetyl iodide, at least one organic impurity and at least one inorganic impurity. The at least one organic impurity includes at least one of: difluoroiodomethane, pentafluoroiodoethane, iodomethane, iodopropane, dichlorotetrafluoroethane, dichlorotrifluoroethane, trichlorotrifluoroethane, methyltrifluoroacetate, trifluoroacetic anhydride, difluorobutane and methyl propane. The at least one inorganic impurity includes at least one of: hydrogen iodide, hydrogen chloride, iodine and hydrogen triiodide.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A composition comprising:
trifluoroacetyl iodide; at least one organic impurity comprising at least one of: difluoroiodomethane, pentafluoroiodoethane, iodomethane, iodopropane, dichlorotetrafluoroethane, dichlorotrifluoroethane, trichlorotrifluoroethane, methyltrifluoroacetate, trifluoroacetic anhydride, difluorobutane and methyl propane; and at least one inorganic impurity comprising at least one of: hydrogen iodide, hydrogen chloride, iodine and hydrogen triiodide.
2 . The composition of claim 1 , wherein the at least one organic impurity is present, in GC area % of total organic compounds, in an amount from about 0.05 GC area % to about 5.0 GC area %.
3 . The composition of claim 1 , wherein the at least one organic impurity is present, in GC area % of total organic compounds, in an amount from about 0.05 GC area % to about 1.0 GC area %.
4 . The composition of claim 1 , wherein the at least one organic impurity comprises trifluoroacetic anhydride present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 1.0 GC area %.
5 . The composition of claim 1 , wherein the at least one organic impurity comprises pentafluoroiodoethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.5 GC area %.
any of claims 1 - 5
6 . The composition of claim 1 , wherein the at least one organic impurity comprises iodomethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.5 GC area %.
7 . The composition of claim 1 , wherein the at least one organic impurity comprises methyltrifluoroacetate present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 2.0 GC area %.
8 . The composition of claim 1 , wherein the at least one organic impurity comprises at least one of: difluoroiodomethane, dichlorotetrafluoroethane, dichlorotrifluoroethane, trichlorotrifluoroethane, iodopropane, difluorobutane and methyl propane present, in GC area % of total organic compounds, in total in an amount from about 0.0001 GC area % to about 0.5 GC area %.
9 . The composition of claim 1 , further comprising at least one additional organic impurity comprising at least one of: trifluoroacetic acid, trifluoroacetyl fluoride, trifluoroacetyl chloride, trifluoroiodomethane and chlorotrifluoroethane.
10 . The composition of claim 9 , wherein the at least one additional organic impurity comprises trifluoroacetic acid present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 2.0 GC area %.
11 . The composition of claim 9 , wherein the at least one additional organic impurity comprises trifluoroacetyl fluoride present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.05 GC area %.
12 . The composition of claim 9 , wherein the at least one additional organic impurity comprises trifluoroacetyl chloride present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 2.0 GC area %.
13 . The composition of claim 9 , wherein the at least one additional organic impurity comprises trifluoroiodomethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 2.0 GC area %.
14 . The composition of claim 9 , wherein the at least one additional organic impurity comprises chlorotrifluoroethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.5 GC area %.
15 . The composition of claim 1 , wherein the at least one inorganic impurity is present in total in an amount from about 0.01 wt. % to about 1.5 wt. % of the composition.
16 . The composition of claim 1 , wherein the at least one inorganic impurity is present in total in an amount from about 0.01 wt. % to about 0.5 wt. % of the composition.
17 . The composition of claim 1 , wherein the at least one inorganic impurity comprises iodine in amount from about 0.001 wt. % to about 0.5 wt. % of the composition.
18 . The composition of claim 1 , wherein the at least one inorganic impurity comprises hydrogen iodide in amount from about 0.0001 wt. % to about 0.5 wt. % of the composition.
19 . The composition of claim 1 , wherein the at least one inorganic impurity comprises hydrogen triiodide in amount from about 0.0001 wt. % to about 0.5 wt. % of the composition.
20 . The composition of claim 1 , wherein the at least one organic impurity is present, in GC area % of total organic compounds, in an amount from about 0.05 GC area % to about 5.0 GC area %, and the at least one inorganic impurity is present in an amount from about 0.01 wt. % to about 0.5 wt. % of the composition.Join the waitlist — get patent alerts
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