US2022112226A1PendingUtilityA1

Trifluoroacetyl iodide compositions useful for making trifluoroiodomethane

Assignee: HONEYWELL INT INCPriority: Oct 14, 2020Filed: Oct 6, 2021Published: Apr 14, 2022
Est. expiryOct 14, 2040(~14.2 yrs left)· nominal 20-yr term from priority
C07C 17/363C07F 13/00C07C 19/16C07C 69/62
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Claims

Abstract

The present disclosure provides a composition including trifluoroacetyl iodide, at least one organic impurity and at least one inorganic impurity. The at least one organic impurity includes at least one of: difluoroiodomethane, pentafluoroiodoethane, iodomethane, iodopropane, dichlorotetrafluoroethane, dichlorotrifluoroethane, trichlorotrifluoroethane, methyltrifluoroacetate, trifluoroacetic anhydride, difluorobutane and methyl propane. The at least one inorganic impurity includes at least one of: hydrogen iodide, hydrogen chloride, iodine and hydrogen triiodide.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A composition comprising:
 trifluoroacetyl iodide;   at least one organic impurity comprising at least one of: difluoroiodomethane, pentafluoroiodoethane, iodomethane, iodopropane, dichlorotetrafluoroethane, dichlorotrifluoroethane, trichlorotrifluoroethane, methyltrifluoroacetate, trifluoroacetic anhydride, difluorobutane and methyl propane; and   at least one inorganic impurity comprising at least one of: hydrogen iodide, hydrogen chloride, iodine and hydrogen triiodide.   
     
     
         2 . The composition of  claim 1 , wherein the at least one organic impurity is present, in GC area % of total organic compounds, in an amount from about 0.05 GC area % to about 5.0 GC area %. 
     
     
         3 . The composition of  claim 1 , wherein the at least one organic impurity is present, in GC area % of total organic compounds, in an amount from about 0.05 GC area % to about 1.0 GC area %. 
     
     
         4 . The composition of  claim 1 , wherein the at least one organic impurity comprises trifluoroacetic anhydride present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 1.0 GC area %. 
     
     
         5 . The composition of  claim 1 , wherein the at least one organic impurity comprises pentafluoroiodoethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.5 GC area %. 
       any of  claims 1 - 5   
     
     
         6 . The composition of  claim 1 , wherein the at least one organic impurity comprises iodomethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.5 GC area %. 
     
     
         7 . The composition of  claim 1 , wherein the at least one organic impurity comprises methyltrifluoroacetate present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 2.0 GC area %. 
     
     
         8 . The composition of  claim 1 , wherein the at least one organic impurity comprises at least one of: difluoroiodomethane, dichlorotetrafluoroethane, dichlorotrifluoroethane, trichlorotrifluoroethane, iodopropane, difluorobutane and methyl propane present, in GC area % of total organic compounds, in total in an amount from about 0.0001 GC area % to about 0.5 GC area %. 
     
     
         9 . The composition of  claim 1 , further comprising at least one additional organic impurity comprising at least one of: trifluoroacetic acid, trifluoroacetyl fluoride, trifluoroacetyl chloride, trifluoroiodomethane and chlorotrifluoroethane. 
     
     
         10 . The composition of  claim 9 , wherein the at least one additional organic impurity comprises trifluoroacetic acid present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 2.0 GC area %. 
     
     
         11 . The composition of  claim 9 , wherein the at least one additional organic impurity comprises trifluoroacetyl fluoride present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.05 GC area %. 
     
     
         12 . The composition of  claim 9 , wherein the at least one additional organic impurity comprises trifluoroacetyl chloride present, in GC area % of total organic compounds, in amount from about 0.001 GC area % to about 2.0 GC area %. 
     
     
         13 . The composition of  claim 9 , wherein the at least one additional organic impurity comprises trifluoroiodomethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 2.0 GC area %. 
     
     
         14 . The composition of  claim 9 , wherein the at least one additional organic impurity comprises chlorotrifluoroethane present, in GC area % of total organic compounds, in amount from about 0.0001 GC area % to about 0.5 GC area %. 
     
     
         15 . The composition of  claim 1 , wherein the at least one inorganic impurity is present in total in an amount from about 0.01 wt. % to about 1.5 wt. % of the composition. 
     
     
         16 . The composition of  claim 1 , wherein the at least one inorganic impurity is present in total in an amount from about 0.01 wt. % to about 0.5 wt. % of the composition. 
     
     
         17 . The composition of  claim 1 , wherein the at least one inorganic impurity comprises iodine in amount from about 0.001 wt. % to about 0.5 wt. % of the composition. 
     
     
         18 . The composition of  claim 1 , wherein the at least one inorganic impurity comprises hydrogen iodide in amount from about 0.0001 wt. % to about 0.5 wt. % of the composition. 
     
     
         19 . The composition of  claim 1 , wherein the at least one inorganic impurity comprises hydrogen triiodide in amount from about 0.0001 wt. % to about 0.5 wt. % of the composition. 
     
     
         20 . The composition of  claim 1 , wherein the at least one organic impurity is present, in GC area % of total organic compounds, in an amount from about 0.05 GC area % to about 5.0 GC area %, and the at least one inorganic impurity is present in an amount from about 0.01 wt. % to about 0.5 wt. % of the composition.

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