Light-emitting device and method for manufacturing the same

Abstract

A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

1 . (canceled) 
     
     
         2 . A light-emitting device comprising:
 a substrate comprising a first opening;   a first insulating layer over the substrate;   a first transistor, a second transistor, and a first electrode over the first insulating layer;   a second insulating layer over the first transistor, the second transistor, and the first electrode;   a second electrode electrically connected to the first transistor and over the second insulating layer;   a light-emitting layer over the second electrode;   a third electrode over the light-emitting layer; and   a fourth electrode electrically connected to the first electrode through a conductive layer in the first opening,   wherein the first electrode is electrically connected to the second transistor.   
     
     
         3 . A light-emitting device comprising:
 a substrate comprising a first opening;   a bonding layer comprising a second opening;   a first insulating layer over the bonding layer;   a first transistor, a second transistor, and a first electrode over the first insulating layer;   a second insulating layer over the first transistor, the second transistor, and the first electrode;   a second electrode electrically connected to the first transistor and over the second insulating layer;   a light-emitting layer over the second electrode;   a third electrode over the light-emitting layer; and   a fourth electrode electrically connected to the first electrode through a conductive layer in the first opening and the second opening,   wherein the first electrode is electrically connected to the second transistor.   
     
     
         4 . The light-emitting device according to  claim 2 ,
 wherein the first insulating layer comprises a second opening, the second opening overlapping with the first opening, and   wherein the first electrode is in the second opening.   
     
     
         5 . The light-emitting device according to  claim 3 ,
 wherein the first insulating layer comprises a third opening, the third opening overlapping with the first opening, and   wherein the first electrode is in the third opening.   
     
     
         6 . The light-emitting device according to  claim 2 , wherein the conductive layer comprises a conductive particle. 
     
     
         7 . The light-emitting device according to  claim 3 , wherein the conductive layer comprises a conductive particle. 
     
     
         8 . The light-emitting device according to  claim 2 , wherein the substrate is a flexible substrate. 
     
     
         9 . The light-emitting device according to  claim 3 , wherein the substrate is a flexible substrate. 
     
     
         10 . The light-emitting device according to  claim 2 , wherein each of the first transistor and the second transistor comprises:
 a gate electrode over the first insulating layer;   a gate insulating layer over the gate electrode;   a semiconductor layer over the gate insulating layer; and   a source or drain electrode electrically connected to the semiconductor layer.   
     
     
         11 . The light-emitting device according to  claim 10 , wherein the semiconductor layer comprises an oxide semiconductor. 
     
     
         12 . The light-emitting device according to  claim 3 , wherein each of the first transistor and the second transistor comprises:
 a gate electrode over the first insulating layer;   a gate insulating layer over the gate electrode;   a semiconductor layer over the gate insulating layer; and   a source or drain electrode electrically connected to the semiconductor layer.   
     
     
         13 . The light-emitting device according to  claim 12 , wherein the semiconductor layer comprises an oxide semiconductor. 
     
     
         14 . The light-emitting device according to  claim 2 , wherein the light-emitting layer does not overlap with the second transistor. 
     
     
         15 . The light-emitting device according to  claim 3 , wherein the light-emitting layer does not overlap with the second transistor.