US2022085128A1PendingUtilityA1

Display Device

Assignee: INNOLUX CORPPriority: Apr 8, 2016Filed: Nov 26, 2021Published: Mar 17, 2022
Est. expiryApr 8, 2036(~9.7 yrs left)· nominal 20-yr term from priority
H10D 30/6757H10D 30/6755H10D 30/6745H10D 86/481H10D 86/471H10D 86/423H10D 86/60H10D 86/40H10D 30/6734H10D 30/6733H10D 30/6723H01L 29/78672H01L 27/3248H01L 27/3272H01L 29/78696H01L 27/1251H01L 29/78648H01L 29/78645H01L 27/1214H01L 29/7869H01L 27/3262H01L 27/1255H01L 27/1225H10K 59/1213H10K 59/123H10K 59/126
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Claims

Abstract

A display device includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor including an oxide semiconductor; a first top gate electrode disposed above the first semiconductor; and a first drain electrode electrically connected to the first semiconductor, wherein the first drain electrode is electrically connected to the light emitting diode. The second transistor includes: a second semiconductor including a silicon semiconductor; two second top gate electrodes disposed above the second semiconductor; two second bottom gate electrodes disposed between the second semiconductor and the substrate; and a second drain electrode electrically connected to the second semiconductor, wherein the second drain electrode is electrically connected to the first top gate electrode of the first transistor.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A display device, comprising:
 a substrate;   a light emitting diode disposed above the substrate;   a first transistor disposed above the substrate and comprising:
 a first semiconductor including an oxide semiconductor; 
 a first top gate electrode disposed above the first semiconductor; and 
 a first drain electrode electrically connected to the first semiconductor, wherein the first drain electrode is electrically connected to the light emitting diode; and 
   a second transistor disposed above the substrate and comprising:
 a second semiconductor including a silicon semiconductor; 
 two second top gate electrodes disposed above the second semiconductor; 
 two second bottom gate electrodes disposed between the second semiconductor and the substrate; and 
 a second drain electrode electrically connected to the second semiconductor, wherein the second drain electrode is electrically connected to the first top gate electrode of the first transistor. 
   
     
     
         2 . The display device of  claim 1 , wherein the second drain electrode is electrically connected to the first top gate electrode of the first transistor via a metal bridge. 
     
     
         3 . The display device of  claim 1 , wherein the first transistor further comprises a first bottom gate electrode disposed under the first semiconductor. 
     
     
         4 . The display device of  claim 3 , wherein the first bottom gate electrode of the first transistor is a first light shielding element. 
     
     
         5 . The display device of  claim 1 , wherein at least one of the second bottom gate electrodes of the second transistor is a second light shielding element. 
     
     
         6 . The display device of  claim 1 , wherein the display device comprises a capacitor electrically connected to the first transistor and the light emitting diode. 
     
     
         7 . The display device of  claim 6 , wherein the capacitor has two capacitor electrodes, and one of the capacitor electrodes is made of the same material of the oxide semiconductor. 
     
     
         8 . The display device of  claim 7 , wherein the other of the capacitor electrodes comprises a metal. 
     
     
         9 . The display device of  claim 1 , wherein at least one of the second bottom gate electrodes comprises a metal.

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