Solid-state imaging device to improve photoelectric efficiency

Abstract

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

What is claimed is: 
     
         1 . A solid-state imaging device, comprising:
 a first electrode;   a second electrode; and   a photoelectric conversion film between the first electrode and the second electrode, wherein
 the photoelectric conversion film includes an organic semiconductor and an inorganic material, and 
 a mixed state of the organic semiconductor and the inorganic material is uniform. 
   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion film is a co-deposited film. 
     
     
         3 . The solid-state imaging device according to  claim 1 , wherein a volume ratio of the inorganic material in the photoelectric conversion film is one of 70% or more or 30% or less. 
     
     
         4 . The solid-state imaging device according to  claim 1 , wherein the photoelectric conversion film does not include ligands. 
     
     
         5 . The solid-state imaging device according to  claim 1 , wherein
 the inorganic material has a light transmittance in a visible range,   the light transmittance is at least 70%,   the organic semiconductor has a light absorption rate in the visible range, and   the light absorption rate is less than 30%.   
     
     
         6 . The solid-state imaging device according to  claim 1 , wherein the inorganic material has a bandgap energy of at least 3 eV. 
     
     
         7 . The solid-state imaging device according to  claim 1 , wherein the inorganic material comprises zinc sulfide (ZnS). 
     
     
         8 . The solid-state imaging device according to  claim 1 , wherein the inorganic material comprises titanium oxide (TiO2). 
     
     
         9 . The solid-state imaging device according to  claim 1 , wherein the organic semiconductor and the inorganic material are alternately and repetitively laminated in the photoelectric conversion film. 
     
     
         10 . The solid-state imaging device according to  claim 1 , wherein the organic semiconductor includes at least one of quinacridone, a quinacridone derivative, subphthalocyanine, or a subphthalocyanine derivative. 
     
     
         11 . The solid-state imaging device according to  claim 1 , further comprising:
 a first element substrate including the photoelectric conversion film; and   a second element substrate including a signal processing circuit configured to process an electric signal that is photoelectrically converted in the photoelectric conversion film, wherein the first element substrate and the second element substrate are laminated.   
     
     
         12 . The solid-state imaging device according to  claim 1 , further comprising
 a semiconductor substrate that includes at least one photoelectric conversion element, wherein the first electrode, the photoelectric conversion film, and the second electrode are on the semiconductor substrate.