Semiconductor display device

Abstract

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic is insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching, to expose an active layer of the TFT.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a substrate;   a semiconductor layer over the substrate;   a gate insulating layer over the semiconductor layer;   a gate electrode over the gate insulating layer;   a first inorganic insulating layer over the gate electrode;   a second inorganic insulating layer over the first inorganic insulating layer;   a wiring over the second inorganic insulating layer, the wiring being electrically connected to the semiconductor layer through a contact hole of the gate insulating layer, the first inorganic insulating layer, and the second inorganic insulating layer;   an organic layer over the second inorganic insulating layer and the wiring;   a third inorganic insulating layer over a top surface of the organic layer; and   a pixel electrode over the third inorganic insulating layer, the pixel electrode being electrically connected to the wiring through a first opening of the organic layer and a second opening of the third inorganic insulating layer,   wherein a width of the first opening is larger than a width of the second opening,   wherein the organic layer comprises a curved surface, and   wherein the third inorganic insulating layer is in contact with the curved surface.   
     
     
         3 . The semiconductor device according to  claim 2 ,
 wherein the wiring comprises a first layer including titanium, a second layer including aluminum, and a third layer including titanium.   
     
     
         4 . The semiconductor device according to  claim 2 , wherein the organic layer comprises acrylic. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the second inorganic insulating layer comprises silicon nitride. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein the third inorganic insulating layer comprises silicon nitride. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein the gate insulating layer comprises silicon oxide. 
     
     
         8 . The semiconductor device according to  claim 2 , wherein the contact hole and the second opening do not overlap with each other. 
     
     
         9 . The semiconductor device according to  claim 2 , wherein an end portion of the wiring is covered with the organic layer. 
     
     
         10 . A semiconductor device comprising:
 a substrate;   a semiconductor layer over the substrate;   a silicon oxide layer over the semiconductor layer;   a gate electrode over the silicon oxide layer;   a first silicon nitride layer over the gate electrode;   an inorganic insulating layer over the first silicon nitride layer;   a wiring over the inorganic insulating layer, the wiring being electrically connected to the semiconductor layer through a contact hole of the silicon oxide layer, the first silicon nitride layer, and the inorganic insulating layer;   an organic layer over the inorganic insulating layer and the wiring;   a second silicon nitride layer over a top surface of the organic layer; and   a pixel electrode over the second silicon nitride layer, the pixel electrode being electrically connected to the wiring through a first opening of the organic layer and a second opening of the second silicon nitride layer,   wherein a width of the first opening is larger than a width of the second opening,   wherein the organic layer comprises a curved surface, and   wherein the second silicon nitride layer is in contact with the curved surface.   
     
     
         11 . The semiconductor device according to  claim 10 ,
 wherein the wiring comprises a first layer including titanium, a second layer including aluminum, and a third layer including titanium.   
     
     
         12 . The semiconductor device according to  claim 10 , wherein the organic layer comprises acrylic. 
     
     
         13 . The semiconductor device according to  claim 10 , wherein the contact hole and the second opening do not overlap with each other. 
     
     
         14 . The semiconductor device according to  claim 10 , wherein an end portion of the wiring is covered with the organic layer.