Solid-state image sensor, method of manufacturing the same, and electronic device

Abstract

A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.

1 . A solid-state image sensor comprising:
 a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes, wherein the first and second electrodes sandwich the photoelectric converting film from below and above, respectively, wherein the first electrode is a separated electrode that includes a first portion overlapping the first pixel; and   a second pixel including the photoelectric converting unit, wherein a second portion of the separated electrode that overlaps the second pixel is formed to have a planar size smaller than a planar size of the separated electrode of the first pixel, the second pixel including the first portion of the separated electrode extending to a region of the second pixel which is vacant due to the smaller planar size of the second portion of the separated electrode.   
     
     
         2 . The solid-state image sensor according to  claim 1 , wherein the first portion of the separated electrode is connected to wiring which supplies a fixed potential. 
     
     
         3 . The solid-state image sensor according to  claim 1 , wherein the first portion of the separated electrode is an isolated pattern which is not connected to wiring. 
     
     
         4 . The solid-state image sensor according to  claim 1 , wherein the first pixel and the second pixel are adjacent to one another in a row direction. 
     
     
         5 . The solid-state image sensor according to  claim 1 , wherein the first pixel and the second pixel are diagonally adjacent to one another. 
     
     
         6 . The solid-state image sensor according to  claim 1 , wherein a third portion of the separated electrode extends between the first and second pixels and at least one other pixel. 
     
     
         7 . The solid-state image sensor according to  claim 1 , wherein the second electrode is a contiguous electrode that overlaps the first and second pixels. 
     
     
         8 . The solid-state image sensor according to  claim 1 , wherein the first portion of the separated electrode overlaps a boundary between the first pixel and the second pixel and a boundary between the second pixel and a third pixel. 
     
     
         9 . The solid-state image sensor according to  claim 8 , wherein the first pixel, the second pixel, and the third pixel are adjacent to one another in a row direction. 
     
     
         10 . The solid-state image sensor according to  claim 9 , wherein the first portion of the separated electrode is electrically connected to a floating diffusion region. 
     
     
         11 . An imaging device, comprising:
 a solid-state image sensor including:
 a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes, wherein the first and second electrodes sandwich the photoelectric converting film from below and above, respectively, wherein the first electrode is a separated electrode that includes a first portion overlapping the first pixel; and 
 a second pixel including the photoelectric converting unit, wherein a second portion of the separated electrode that overlaps the second pixel is formed to have a planar size smaller than a planar size of the separated electrode of the first pixel, the second pixel including the first portion of the separated electrode extending to a region of the second pixel which is vacant due to the smaller planar size of the second portion of the separated electrode. 
   
     
     
         12 . The imaging device according to  claim 11 , wherein the first portion of the separated electrode is connected to wiring which supplies a fixed potential. 
     
     
         13 . The imaging device according to  claim 11 , wherein the first portion of the separated electrode is an isolated pattern which is not connected to wiring. 
     
     
         14 . The imaging device according to  claim 11 , wherein the first pixel and the second pixel are adjacent to one another in a row direction. 
     
     
         15 . The imaging device according to  claim 11 , wherein the first pixel and the second pixel are diagonally adjacent to one another. 
     
     
         16 . The imaging device according to  claim 11 , wherein a third portion of the separated electrode extends between the first and second pixels and at least one other pixel. 
     
     
         17 . The imaging device according to  claim 11 , wherein the second electrode is a contiguous electrode that overlaps the first and second pixels. 
     
     
         18 . The imaging device according to  claim 11 , wherein the first portion of the separated electrode overlaps a boundary between the first pixel and the second pixel and a boundary between the second pixel and a third pixel. 
     
     
         19 . The imaging device according to  claim 18 , wherein the first pixel, the second pixel, and the third pixel are adjacent to one another in a row direction. 
     
     
         20 . The imaging device according to  claim 19 , wherein the first portion of the separated electrode is electrically connected to a floating diffusion region.