Synapse array of a neuromorphic device including a synapse array having a plurality of ferroelectricity field effect transistors

Abstract

A synapse array of a neuromorphic device comprises a first input neuron, a second input neuron, an output neuron, and a synapse. The synapse comprises a plurality of pairs of ferroelectric field effect transistors electrically connected to each other in parallel, each of the plurality of pairs of ferroelectric field effect transistors comprises a first ferroelectric field effect transistor and a second ferroelectric field effect transistor, and the first ferroelectric field effect transistor and the second ferroelectric field effect transistor are electrically connected to each other in series.

What is claimed is: 
     
         1 . A synapse array of a neuromorphic device comprising:
 a first input neuron;   a second input neuron;   an output neuron; and   a synapse,   wherein the synapse comprises a plurality of pairs of ferroelectric field effect transistors electrically connected to each other in parallel,   wherein each of the plurality of pairs of ferroelectric field effect transistors comprises a first ferroelectric field effect transistor and a second ferroelectric field effect transistor, and   wherein the first ferroelectric field effect transistor and the second ferroelectric field effect transistor are electrically connected to each other in series.   
     
     
         2 . The synapse array of the neuromorphic device of  claim 1 ,
 wherein the first ferroelectric field effect transistor includes a drain electrode electrically connected to the first input neuron.   
     
     
         3 . The synapse array of the neuromorphic device of  claim 2 ,
 wherein the first ferroelectric field effect transistor includes a source electrode electrically connected to the output neuron.   
     
     
         4 . The synapse array of the neuromorphic device of  claim 3 ,
 wherein the first ferroelectric field effect transistor includes a body electrically connected to the source electrode of the first ferroelectric field effect transistor.   
     
     
         5 . The synapse array of the neuromorphic device of  claim 1 ,
 wherein the second ferroelectric field effect transistor includes a source electrode electrically connected to the second input neuron.   
     
     
         6 . The synapse array of the neuromorphic device of  claim 5 ,
 wherein the second ferroelectric field effect transistor includes a drain electrode electrically connected to the output neuron.   
     
     
         7 . The synapse array of the neuromorphic device of  claim 6 ,
 wherein the second ferroelectric field effect transistor includes a body electrically connected to the drain electrode of the second ferroelectric field effect transistor.   
     
     
         8 . The synapse array of the neuromorphic device of  claim 1 ,
 wherein the first ferroelectric field effect transistor includes a first gate electrode and the second field effect transistor includes a second gate electrode, and   wherein the first gate electrode and the second gate electrode are electrically connected to a common gating controller.   
     
     
         9 . The synapse array of the neuromorphic device of  claim 1 ,
 wherein the first ferroelectric field effect transistor comprises an n-type ferroelectric field effect transistor, and   wherein the second ferroelectric field effect transistor comprises a p-type ferroelectric field effect transistor.   
     
     
         10 . The synapse array of the neuromorphic device of  claim 1 ,
 wherein the first input neuron provides a first reference voltage to the synapse, and the second input neuron provides a second reference voltage to the synapse, and   wherein the first reference voltage is greater than the second reference voltage.