Film Forming Method

Abstract

A film forming method is provided in which, when a dielectric film is formed by sputtering a target, the number of particles to get adhered to the surface of a to-be-processed substrate immediately after film formation can be decreased to the extent possible without impairing the function of effectively suppressing the induction of abnormal discharging. A film forming method, according to this invention, of forming a dielectric film on a surface of a to-be-processed substrate by sputtering a target inside a vacuum chamber includes: at the time of sputtering the target, applying negative potential to the target in the form of pulses; and a frequency of applying the negative potential in the form of pulses is set to a range of 100 kHz or more and 150 kHz or below and an application time (Ton) of the negative potential is set to a range of 5 μsec or longer and 8 μsec or shorter.

1 . A film forming method of forming a dielectric film on a surface of a to-be-processed substrate by sputtering a target inside a vacuum chamber, comprising applying negative potential to the target in a form of pulses at a time of sputtering the target, wherein:
 a frequency in applying the negative potential in the form of pulses is set to a range of 100 kHz or more and 150 kHz or below; and   an application time of the negative potential is set to a range of 5 μsec or longer and 8 μsec or shorter.   
     
     
         2 . The film forming method according to  claim 1 , wherein the target is made of silicon and, at the time of sputtering the target, a reactive gas is introduced together with a rare gas, thereby forming by reactive sputtering a silicon nitride film as a dielectric film.