Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Abstract

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

What is claimed is: 
     
         1 . A semiconductor device having a gate-all-around field effect transistor (GAA FET), comprising:
 carbon nanotubes (CNTs) disposed over a substrate;   a gate structure formed around each of the CNTs in a channel region;   a doped semiconductor layer wrapping around each of the CNTs in a source/drain region; and   a source/drain contact formed over the semiconductor layer.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the doped semiconductor layer is crystalline silicon. 
     
     
         3 . The semiconductor device of  claim 1 , wherein an impurity concentration in the doped semiconductor layer is in a range from 1×10 20  atoms/cm 3  to 1×10 21  atoms/cm 3 . 
     
     
         4 . The semiconductor device of  claim 1 , wherein the GAA FET is an n-type FET and the doped semiconductor layer contains at least one of P and As as impurities. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the GAA FET is a p-type FET and the doped semiconductor layer contains at least one of B and Ga as impurities. 
     
     
         6 . The semiconductor device of  claim 1 , wherein a semiconductor layer having a lower impurity concentration than the doped semiconductor layer is disposed between the doped semiconductor layer and the gate structure. 
     
     
         7 . The semiconductor device of  claim 1 , wherein:
 the CNTs include multiple groups of CNTs,   the CNTs in a same group are located at a same height, and   the multiple groups are located at different heights from each other.   
     
     
         8 . The semiconductor device of  claim 7 , wherein one group is separated from an adjacent group by a distance in a range from 5 nm to 15 nm. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the doped semiconductor layer and the substrate are made of one of Si and SiGe. 
     
     
         10 . The semiconductor device of  claim 1 , wherein ends of the CNTs are covered by an insulating material. 
     
     
         11 . A semiconductor device having a gate-all-around field effect transistor, comprising:
 an isolation insulating layer disposed over a substrate;   carbon nanotubes (CNTs) disposed over the substrate;   a gate structure formed around each of the CNTs in a channel region;   a doped semiconductor layer wrapping around each of the CNTs in a source/drain region; and   a source/drain contact formed over the semiconductor layer,   wherein the doped semiconductor layer is in contact with the isolation insulating layer.   
     
     
         12 . The semiconductor layer of  claim 11 , wherein the doped semiconductor layer passes through the isolation insulating layer and is in contact with the substrate. 
     
     
         13 . The semiconductor layer of  claim 11 , wherein the doped semiconductor layer is not in contact with the substrate. 
     
     
         14 . The semiconductor device of  claim 11 , wherein the gate structure includes a gate dielectric layer wrapping around each of the CNTs, a work function adjustment layer formed on the gate dielectric layer and a body gate electrode layer formed on the work function adjustment layer. 
     
     
         15 . The semiconductor device of  claim 14 , wherein the work function adjustment layer partially wraps around the CNTs with the gate dielectric layer. 
     
     
         16 . The semiconductor device of  claim 14 , wherein the work function adjustment layer fully wraps around each of the CNTs with the gate dielectric layer. 
     
     
         17 . The semiconductor device of  claim 14 , wherein the gate dielectric layer includes one selected from the group consisting of HfO 2  and Al 2 O 3 . 
     
     
         18 . The semiconductor device of  claim 14 , wherein the work function adjustment layer includes TiN. 
     
     
         19 . The semiconductor device of  claim 13 , wherein the doped semiconductor layer is made of SiGe. 
     
     
         20 . A semiconductor device having a gate-all-around field effect transistor (GAA FET), comprising:
 a first GAA FET; and   a second GAA FET, wherein:   each of the first GAA FET and the second GAA FET includes:
 carbon nanotubes (CNTs) disposed over a substrate; and 
 a gate structure formed around the CNTs in a channel region, wherein: 
   the CNTs are shared by the first GAA FET and the second GAA FET, and   source/drain regions of the CNTs are wrapped around by a doped silicon layer.