U-led, u-led device, display and method for the same

Abstract

Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

1 . An optoelectronic device or μ-LED array, comprising:
 an arrangement comprising a plurality of μ-LEDs for generating light emerging from a light emitting surface from the optoelectronic device; and 
 at least one photonic structure arranged between the light-emitting surface and the plurality of μ-LEDs. 
 
     
     
         2 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the photonic structure is configured for beam-shaping of the light generated by the μ-LEDs in such a way that the light emerges at least substantially perpendicularly from the light-emitting surface. 
 
     
     
         3 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the photonic structure comprises a photonic crystal. 
 
     
     
         4 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the arrangement is an array in which the μ-LEDs represent a plurality of pixels and are arranged in a layer, and wherein a photonic structure is arranged or formed in the layer. 
 
     
     
         5 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the arrangement is an array in which the μ-LEDs represent a plurality of pixels arranged in a first layer, and wherein a photonic crystal is arranged in a second layer, the second layer being located between the first layer and the light-emitting surface. 
 
     
     
         6 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the arrangement comprises the plurality of μ-LEDs arranged in a first layer, and wherein a photonic crystal is arranged in a second layer, the second layer being located between the first layer and the light-emitting surface. 
 
     
     
         7 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein each of the μ-LEDs comprises an active region and the photonic structure is located close to the active region such that the photonic structure changes an optical state density present in at least portions of the active region in such a way that a band gap is generated for at least one optical mode with a direction of propagation parallel and/or at a small angle to a light exit surface. 
 
     
     
         8 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the photonic structure is arranged in relation to a plane parallel to the light-emitting surface independently of a positioning of light points, and/or 
 wherein the photonic structure is a two-dimensional photonic crystal, which exhibits a periodic variation of optical refractive index in two spatial directions perpendicular to each other and spanning the plane. 
 
     
     
         9 . The optoelectronic device or μ-LED array according to  claim 1 ,
 wherein the photonic structure comprises a plurality of pillar structures extending at least partially between the light-emitting surface and the plurality of μ-LEDs, wherein one pillar is associated with each μ-LED and is aligned with the light-emitting surface when viewed in a direction perpendicular to the light-emitting surface. 
 
     
     
         10 . The optoelectronic device or μ-LED array according to  claim 9 ,
 wherein the optoelectronic device or μ-LED array is an array in which the μ-LEDs represent a plurality of pixels arranged in a first layer and wherein the pixels are arranged in a second layer, the second layer being located between the first layer and the light-emitting surface. 
 
     
     
         11 . The optoelectronic device or μ-LED array according to  claim 9 ,
 wherein the optoelectronic device or μ-LED array comprises the plurality of μ-LEDs arranged in a first layer, and wherein the pillars are arranged or formed in a second layer, the second layer being located between the first layer and the light-emitting surface. 
 
     
     
         12 . The optoelectronic device or μ-LED array according to  claim 9 ,
 wherein the arrangement is an array in which the μ-LEDs represent a plurality of pixels, one pixel being formed by each pillar. 
 
     
     
         13 . A method for producing an optoelectronic device, comprising:
 providing or making an arrangement comprising a plurality of μ-LEDs for generating light emerging from a light exit surface from the optoelectronic device; and   arranging at least one photonic structure between a light-emitting surface and the plurality of μ-LEDs.   
     
     
         14 . A μ-LED arrangement for generating a pixel of a display, comprising:
 a flat carrier substrate; 
 at least three μ-LEDs, which are arranged on a mounting side of the flat carrier substrate, wherein the at least three μ-LEDs are adapted to emit light of different color transverse to a carrier substrate plane in a direction away from the flat carrier substrate; 
 a flat reflector element spatially arranged on an assembly side relative to the at least three μ-LEDs and configured to reflect light emitted by the at least three μ-LEDs in the direction of the flat carrier substrate; 
 wherein the flat carrier substrate is at least partially transparent so that light reflected from the flat reflector element propagates through the flat carrier substrate and emerges at a display side of the flat carrier substrate opposite the mounting side; and 
 wherein a photonic structure is incorporated in or on the flat carrier substrate, with first and second regions with different refractive indexes, whereas converter material forms one of the first and second regions and is configured in such a way that radiation is emitted as a directed beam of rays.