Selector devices

Abstract

Disclosed herein are selector devices and related devices and techniques. In some embodiments, a selector device may include a first electrode, a second electrode, and a selector material between the first electrode and the second electrode. The selector material may include a dielectric material and a conductive dopant.

1 . A selector device, comprising:
 a first electrode;   a second electrode; and   a selector material between the first electrode and the second electrode, wherein the selector material comprises a dielectric material and a conductive dopant, wherein the dielectric material comprises a chalcogenide.   
     
     
         2 . The selector device of  claim 1 , wherein the chalcogenide comprises at least one of silicon and tellurium. 
     
     
         3 . The selector device of  claim 2 , wherein the chalcogenide comprises germanium. 
     
     
         4 . The selector device of  claim 1 , wherein the chalcogenide comprises a group IV or group VI element. 
     
     
         5 . The selector device of  claim 1 , wherein the conductive dopant includes platinum, silver, gold, tantalum, copper, cobalt, tungsten, ruthenium, palladium, or carbon. 
     
     
         6 . The selector device of  claim 1 , wherein the conductive dopant has a work function less than 4.5 electron volts. 
     
     
         7 . The selector device of  claim 1 , wherein the conductive dopant has a first ion migration velocity, the dielectric material has a second ion migration velocity, and the second ion migration velocity is greater than the first ion migration velocity by a factor of at least 10. 
     
     
         8 . The selector device of  claim 1 , wherein the selector device has a threshold voltage between 0.4 volts and 2.5 volts, and the selector device has a holding voltage between 0.1 volts and 2.5 volts. 
     
     
         9 . The selector device of  claim 1 , further comprising a getter layer between the first electrode and the selector material. 
     
     
         10 . A memory cell, comprising:
 a storage element; and   a selector device coupled to the storage element, wherein the selector device comprises a selector material, the selector material comprises a dielectric material and a conductive dopant, and the dielectric material comprises a chalcogenide.   
     
     
         11 . The memory cell of  claim 10 , wherein the selector device comprises a first electrode and a second electrode, the selector material is between the first electrode and the second electrode, and the first electrode or the second electrode is also an electrode of the storage element. 
     
     
         12 . The memory cell of  claim 10 , wherein the selector device comprises a first electrode and a second electrode, the selector material is between the first electrode and the second electrode, and the selector device further comprises a getter layer between the first electrode and the selector material. 
     
     
         13 . The memory cell of  claim 12 , wherein the getter layer comprises at least one of tantalum, titanium, and chromium. 
     
     
         14 . The memory cell of  claim 10 , wherein the storage element is a resistive random access memory (RRAM) device, a phase change memory (PCM) device, a metal filament memory device, or a magnetoresistive random access memory (MRAM) device. 
     
     
         15 . The memory cell of  claim 10 , wherein the chalcogenide comprises at least one of silicon and tellurium. 
     
     
         16 . The memory cell of  claim 15 , wherein the chalcogenide comprises germanium. 
     
     
         17 . A computing device, comprising:
 a circuit board;   a processing device coupled to the circuit board; and   a memory array coupled to the processing device, wherein the memory array comprises a memory cell having a storage element coupled in series with a selector device, the selector device comprises a selector material, the selector material comprises a dielectric material and a conductive dopant, and the dielectric material comprises a chalcogenide.   
     
     
         18 . The computing device of  claim 17 , further comprising a wireless communications device coupled to the circuit board. 
     
     
         19 . The computing device of  claim 17 , wherein the storage element includes a resistive switch. 
     
     
         20 . The computing device of  claim 17 , wherein the chalcogenide comprises at least one of silicon, tellurium, and germanium.